Numerical investigation of one-dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime

Hirvi, K. P.; Paalanen, M. A.; Pekola, Jukka P.

doi:10.1063/1.362813

Cited by 24 publications

(13 citation statements)

References 3 publications

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“…The tunnelling time and transferred charge is calculated by stochastic sampling [34] of single tunnelling events over all junctions as…”

Section: Methodsmentioning

confidence: 99%

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Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer

Samani¹,

Scheller²,

Yurttagül³

et al. 2021

Preprint

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Access to lower temperatures has consistently enabled scientific breakthroughs. Pushing the limits of on-chip temperatures deep into the microkelvin regime would open the door to unprecedented quantum coherence, novel quantum states of matter, and also the discovery of unexpected phenomena. Adiabatic demagnetization is the workhorse of microkelvin cooling, requiring a dilution refrigerator precooling stage. Pulse-tube dilution refrigerators have grown enormously in popularity due to their vast experimental space and independence of helium, but their unavoidable vibrations are making microkelvin cooling very difficult. On-chip thermometry in this unexplored territory is also not a trivial task due to extreme sensitivity to noise. Here, we present a pulse-tube compatible microkelvin sample holder with on-board cooling and microwave filtering and introduce a new type of temperature sensor, the gate Coulomb blockade thermometer (gCBT), working deep into the microkelvin regime. Using on-and off-chip cooling, we demonstrate electronic temperatures as low as 224±7 µK, remaining below 300 µK for 27 hours, thus providing sufficient time for measurements. Finally, we give an outlook for cooling below 50 µK for a new generation of microkelvin transport experiments.

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“…The tunnelling time and transferred charge is calculated by stochastic sampling [34] of single tunnelling events over all junctions as…”

Section: Methodsmentioning

confidence: 99%

“…For calculating the tunnel conductance of the CBT we utilize a Markov-Chain Monte-Carlo (MCMC) algorithm which was introduced in detail in Ref. 34. We assume a uniform array in which the island capacitance C Σi = 2C ji + C gi consists of the mutual junction capacitance C ji = C j and the capacitance to ground C gi = C g .…”

Section: Data Availabilitymentioning

confidence: 99%

Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer

Samani¹,

Scheller²,

Yurttagül³

et al. 2021

Preprint

View full text Add to dashboard Cite

show abstract

“…The tunneling current I = ±eΓ ± i is a result of the single charge tunneling events. However, we follow the variance reduction method introduced by [30,31] to calculate I. Here, we make use of the current conservation I = I 1 = I 2 = ... = I N along the tunnel junction chain, and express the total current as I = ∆Q/∆t using [31]:…”

Section: Numerical Modelmentioning

confidence: 99%

Coulomb blockade thermometry beyond the universal regime

Yurttagül,

Sarsby,

Geresdi

2020

Preprint

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The charge localization of single electrons on mesoscopic metallic islands leads to a suppression of the electrical current, known as the Coulomb blockade. When this correction is small, it enables primary electron thermometry, as it was first demonstrated by Pekola et al. (Phys. Rev. Letters, 73, 2903). However, in the low temperature limit, random charge offsets influence the conductance and limit the universal behavior of a single metallic island. In this work, we numerically investigate the conductance of a junction array, and demonstrate the extension of the primary regime for large arrays, even when the variations in the device parameters are taken into account. We find that our simulations agree well with measured conductance traces in the submillikelvin electron temperature regime.

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“…Electron wave functions diffuse and overlap, which merge discrete quantum levels into minibands, with quantum dots approaching and forming a quasi-crystal structure. This band rearrangement has significant applications for many novel optoelectronic/electronic devices [1-15]. For example, quantum dot solar cells, the most exciting photovoltaic device with more than 63% conversion efficiency, have to utilize minibands for carrier transport and additional optical transitions.…”

Section: Introductionmentioning

confidence: 99%

Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

Igarashi

Rahman

et al. 2013

Nanoscale Res Lett

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We fabricated a three-dimensional (3D) stacked Si nanodisk (Si-ND) array with a high aspect ratio and uniform size by using our advanced top-down technology consisting of bio-template and neutral beam etching processes. We found from conductive atomic microscope measurements that conductivity became higher as the arrangement was changed from a single Si-ND to two-dimensional (2D) and 3D arrays with the same matrix of SiC, i.e., the coupling of wave functions was changed. Moreover, our theoretical calculations suggested that the formation of minibands enhanced tunneling current, which well supported our experimental results. Further analysis indicated that four or more Si-NDs basically maximized the advantage of minibands in our structure. However, it appeared that differences in miniband widths between 2D and 3D Si-ND arrays did not affect the enhancement of the optical absorption coefficient. Hence, high photocurrent could be observed in our Si-ND array with high photoabsorption and carrier conductivity due to the formation of 3D minibands.

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Numerical investigation of one-dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime

Cited by 24 publications

References 3 publications

Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer

Microkelvin electronics on a pulse-tube cryostat with a gate Coulomb blockade thermometer

Coulomb blockade thermometry beyond the universal regime

Generation of high photocurrent in three-dimensional silicon quantum dot superlattice fabricated by combining bio-template and neutral beam etching for quantum dot solar cells

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