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Universal features of I–V characteristics of one-dimensional arrays of normal metal tunnel junctions have been tested against inhomogenities in the junction parameters, number of junctions in the array, and magnetic field. We find that the differential conductance versus bias voltage obeys the analytic form to within 1% if the fabrication errors are smaller than 10% in junction areas, and if the array has more than ten junctions. Furthermore, the universal relation is insensitive to magnetic field at least up to 8 T.

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Arrays of tunnel junctions provide simple thermometric parameters in the limit where thermal excitations dominate over charging effects. We present numerical simulations for calculating the current versus voltage characteristics of an arbitrary one-dimensional array at arbitrary temperatures on the premise of the ''orthodox theory.'' The purpose of the computer simulations is to investigate the suitability of tunnel junction arrays for thermometry at low temperatures when the analytical formulas do not hold and, specifically, to see the effect of background charges in this regime.