Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistorThe transmission coefficient of a two dimensional scattering region connected to ideal leads was calculated for the case of electrons interacting with an inhomogeneous distribution of repulsive or attractive scattering centers. The scattering centers with Gaussian profiles were positioned at regular intervals perpendicular to the transport direction, but were spaced according to a power law along this direction. The transmission function was obtained using a scattering formalism based on the R-matrix method. The simulations revealed that although, overall, the transmission coefficient decreases and becomes almost monotonously dependent on energy as the inhomogeneity of both attractive and repulsive scattering centers increases, the redistribution of transmission between open channels depends on the type of scattering centers. V C 2014 AIP Publishing LLC.