2000
DOI: 10.1080/002072100415594
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Numerical investigation of the effects of graded layer on the performance of AlGaAs/GaAs heterojunction bipolar transistors

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Cited by 1 publication
(2 citation statements)
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“…4 In AlGaAs-GaAs HBTs, increase recombination in graded emitters decreases the offset voltage and the current gain, and increases the current driving capability, charging time, and emitter-base capacitance. 6 In addition, numerical simulations predict an enhancement of the off current and the on/off current ratio in a laterally graded junctionless transistor with a minimum doping concentration at the center of the channel. 7 Intentional or unintentional inhomogeneous doping profiles in nanostructures can be introduced by the vacuum spray method, 2 high pressure pulsed laser deposition, 8 or by the vapor-liquid-solid method.…”
Section: Introductionmentioning
confidence: 99%
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“…4 In AlGaAs-GaAs HBTs, increase recombination in graded emitters decreases the offset voltage and the current gain, and increases the current driving capability, charging time, and emitter-base capacitance. 6 In addition, numerical simulations predict an enhancement of the off current and the on/off current ratio in a laterally graded junctionless transistor with a minimum doping concentration at the center of the channel. 7 Intentional or unintentional inhomogeneous doping profiles in nanostructures can be introduced by the vacuum spray method, 2 high pressure pulsed laser deposition, 8 or by the vapor-liquid-solid method.…”
Section: Introductionmentioning
confidence: 99%
“…[3][4][5][6][7]12 Quantum effects in such structures have been investigated primarily in systems that are inhomogeneous in spatial dimensions. 13,14 In this paper, we study the transport properties, in particular, the transmission, through nanoscale two dimensional (2D) conductors, known as nanoribbons, in which the spatial distribution of scattering centers is inhomogeneous.…”
Section: Introductionmentioning
confidence: 99%