Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Cornigli, Davide; Reggiani, Susanna; Gnani, Elena; Gnudi, A.; Baccarani, G.; Moens, P.; Vanmeerbeek, P.; Banerjee, Abhishek; Meneghesso, Gaudenzio

doi:10.1109/iedm.2015.7409633

Cited by 29 publications

(22 citation statements)

References 5 publications

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“…The activation energy Ea refers to the barrier that electrons have to overcome for injecting from the Si substrate into GaN layers by thermionic emission. It is evaluated from the slope of ln J-1/T, as reported in literature [17,18]. In this work, Ea at 200 V, 300 V, 500 V, 600 V is measured on p-type ( Figure 3a) and on n-type ( Figure 3b) in the whole temperature range.…”

Section: Resultsmentioning

confidence: 89%

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Song

Yang

et al. 2019

Applied Sciences

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The role of low-resistivity substrate on vertical leakage current (VLC) of AlGaN/GaN-on-Si epitaxial layers has been investigated. AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on both p-type and n-type Si substrates with low resistivity are applied to analyze the vertical leakage mechanisms. The activation energy (Ea) for p-type case is higher than that for n-type at 0–600 V obtained by temperature-dependent current-voltage measurements. An additional depletion region in the region of 0–400 V forms at the AlN/p-Si interface but not for AlN/n-Si. That depletion region leads to a decrease of electron injection and hence effectively reduces the VLC. While in the region of 400–600 V, the electron injection from p-Si substrate increases quickly compared to n-Si substrate, due to the occurrence of impact ionization in the p-Si substrate depletion region. The comparative results indicate that the doping type of low-resistivity substrate plays a key role for VLC.

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Section: Resultsmentioning

confidence: 89%

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Song

Yang

et al. 2019

Applied Sciences

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“…Schematic cross-sections of the AlGaN/AlN/GaN/AlGaN/GaN DC-HEMT structure with silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC are shown in Figure. 2.For more details about working principles and advantages of HEMT with the help of band diagrams can be found in (Cornigli, et al, 2015;Ishida, et al, 2016;Zhang, et al, 2016;Koller, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018;Qi, et al, 2018). The dimensions of the structures are as follows: 1 µm of gate length, 1µm of gate width, source-gate spacing Lsg = 1µm, gate-drain spacing Lgd = 1µm, 1 µm of source length, 1 µm of drain length, 2 µm of SiC silicon carbide polymorphs substrate thickness, 0.5 µm of GaN undoped minor channel and buffer layer thickness, 21 nm of AlGaN undoped back barrier layer thickness, 14 nm of GaN undoped major channel thickness, 2 nm of Al0.3Ga0.7N thickness and, 1 nm of AlN undoped spacer layer thickness, 12 nm of doped carrier supplier layer thickness, 3nm of undoped cap layer thickness and 5.1 eV of gate Schottky contact work function.…”

Section: Device Structurementioning

confidence: 99%

“…In the recent years, a lot of research work has been carried out to study the GaN HEMTs including the optimization of GaN-based HEMT devices and integration (Stoffels, et al, 2015;Zhang, et al, 2016;Wang, et al, 2017;Hashizume, et al, 2018;Kim, et al, 2018), the enhancement of reliability (Koller, et al, 2017;Meneghini, et al, 2017;Qi, et al, 2018), the comprehensive device modeling (Raciti, et al, 2014;Radhakrishna, et al, 2015;Cornigli, et al, 2015) and the commercialization designs (Di Cioccio, et al, 2015;Then, et al, 2015;Ishida, et al, 2016;Lidow, et al, 2016). In addition, the development works have been conducted and reported on microwave noise performance of GaN HEMT.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Sabaghi

2019

HOLOS

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AlGaN/GaN high electron mobility transistors (HEMTs) have established terrific features in the high-power and high-frequency applications of microwave device. In this paper, the impact of silicon carbide polymorphs substrates including 6H-SiC, 3C-SiC and 4H-SiC on the performances of AlGaN/GaN double quantum well HEMTs (DQW-HEMTs) are analyzed and investigated. The results show that the devices with 4H-SiC and 6H-SiC substrates exhibit a higher transconductance of about 192 ms/mm at VDS = 15 V and a lower minimum noise figure (NFmin) of 0.48 and 0.42 dB at 10 GHz than those of devices with 3C-SiC, respectively. Whereas, DC-HEMT with 3C-SiC substrate has a transconductance of about 180 ms/mm at VDS = 15 V and a minimum noise figure of 3.01 dB at 10 GHz. On the other hands, the DC-HEMT with 3C-SiC substrate has lower drain gate capacitance (Cdg) and higher cutoff frequency (ft) than DC-HEMT with 4H-SiC and 6H-SiC substrates. The results demonstrate that AlGaN/GaN DH-HEMTs 4H-SiC and 6H-SiC substrates are promising devices for future highpower and high-frequency electron device applications.

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“…Due to this very uncertainty about 2DHG, many theoretical and simulation works have adopted the approach to treat the multi-layered epi with a simplified composition of layers or more often to lump them into a single layer, avoiding the issue of 2DHG at the interfaces altogether. 7,8,14,15 We have also carried out extensive Capacitance-Votage Profiling (CV) measurements in the standard frequency range (kHz to MHz), but no convincing evidence of the existence of the hole carrier layer has been found. In this work, the authors demonstrate via measurements and TCAD simulations that an ultra-low frequency CV is a key to the detection of the 2DHG in the epi stack.…”

mentioning

confidence: 99%

“…6,7 In order to solve trap-related malfunctions, it is essential to understand the interplay between carriers, traps, and transport processes through various interfaces. 8 An effective way to do this is to build a realistic Technology Caomputer-Aided Design (TCAD) model able to take into account the various transport mechanisms and trap dynamics. The endeavor to model the epi layer of GaN-on-Si is baffled by the unknowns inside the epi at the present time.…”

mentioning

confidence: 99%

Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

Jin-ming

Longobardi

Udrea

et al. 2017

Applied Physics Letters

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Gallium Nitride on Silicon (GaN-on-Si) devices feature a relatively thick epi buffer layer to release the stress related to the lattice constant mismatch between GaN and Si. The buffer layer is formed by several AlGaN-based transition layers with different Al contents. This work addresses the fundamental question of whether two-dimensional hole gases (2DHGs) exist at those interfaces where the theory predicts a high concentration of a negative fixed charge as a consequence of the discontinuity in polarization between the layers. In this study, we demonstrate that the presence of such 2DHGs is consistent with the measured vertical Capacitance-Votage Profiling (CV) and Technology Caomputer-Aided Design (TCAD) simulation in the whole range of measurable frequencies (10 mHz–1 MHz). N-type compensating background donor included in the epi structure in the simulation deck proves to be crucial to explain the depletion region extension consistent with the CV experimental data. For the standard range of frequencies (1 kHz–1 MHz), there was no indication of the presence of 2DHGs. A set of ultra-low frequency (10 mHz–10 Hz) measurements performed were able to reveal the existence of 2DHGs. The outcome of these ultra-low frequency experiments was matched with TCAD simulations which validated our theory.

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Numerical investigation of the lateral and vertical leakage currents and breakdown regimes in GaN-on-Silicon vertical structures

Cited by 29 publications

References 5 publications

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Impact of Silicon Substrate with Low Resistivity on Vertical Leakage Current in AlGaN/GaN HEMTs

Analysis of Silicon Carbide Polymorphs Substrates Effect on Performances of AlGaN/GaN Double Quantum Well HEMTs

Substantiation of buried two dimensional hole gas (2DHG) existence in GaN-on-Si epitaxial heterostructure

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