1989
DOI: 10.1063/1.343733
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Numerical model for degenerate and heterostructure semiconductor devices

Abstract: A one-dimensional finite-difference numerical model appropriate for devices which require degenerate statistics to describe the carrier concentrations is reported. The Joyce–Dixon approximations [Appl. Phys. Lett. 31, 354 (1977)] to Fermi–Dirac statistics were used and found to be efficient and accurate methods to determine carrier concentrations, to calculate derivatives required in the iterative solution of the equations in the numerical model, and to compare to nondegenerate (i.e., Boltzmann statistics) mod… Show more

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Cited by 13 publications
(4 citation statements)
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“…1 is studied with the drift-diffusion (DD) model, which relates the electrostatic potential φ and the quasi-Fermi potentials φ n and φ p to the electron and hole densities n and p (calculated from Fermi-Dirac statistics) and the total net recombination and generation-rate densities R and G as (for background information and physical justification, see, e.g., Ref. [40])…”
Section: Theory and Methodsmentioning
confidence: 99%
“…1 is studied with the drift-diffusion (DD) model, which relates the electrostatic potential φ and the quasi-Fermi potentials φ n and φ p to the electron and hole densities n and p (calculated from Fermi-Dirac statistics) and the total net recombination and generation-rate densities R and G as (for background information and physical justification, see, e.g., Ref. [40])…”
Section: Theory and Methodsmentioning
confidence: 99%
“…This kind of extension of the Scharfetter-Gummel scheme to Fermi-Dirac statistics has been suggested using arithmetic (Purbo et al 1989;Jüngel 1995) or geometric (Stodtmann et al 2012) averaging, leading in general to schemes which are not consistent with the thermodynamic equilibrium ( j = 0 for ϕ n = const). Bessemoulin-Chatard (2012) introduced for drift-diffusion equations with nonlinear diffusion a proper local average guaranteeing consistency with thermodynamic equilibrium.…”
Section: Scharfetter-gummel Scheme Based On Modified Thermal Voltagementioning
confidence: 98%
“…Strictly monotonically increasing non-Boltzmann distribution functions lead to diffusion enhancement. Various extensions of the Scharfetter-Gummel scheme are suggested to account for this effect, see Purbo et al (1989), Jüngel (1995), Stodtmann et al (2012). Unfortunately, they are not thermodynamically consistent.…”
Section: Introductionmentioning
confidence: 97%
“…It exploits the exponential dependence on the chemical potential and allows to recover the correct large time behavior. Various extensions of the Scharfetter-Gummel scheme have been suggested to account the diffusion enhancement induced by non Boltzmann statistics [25,37,39]. Unfortunately, they are not thermodynamically consistent.…”
Section: Introductionmentioning
confidence: 99%