Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

Zhang, Shengdong; Sin, J.K.O.; Lai, Tzu-Hsien; Ko, P.K.

doi:10.1109/16.760414

Cited by 92 publications

(29 citation statements)

References 8 publications

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“…By using which, devices with continuous and discrete doping profiles are analyzed. The analytical results agree well with results measured by [8], [9] and results simulated by MEDICI, a commercial TCAD tool. The simulation models used in MEDICI are CONSRH, AUGER, BGN, FLDMOB, IMPACT.…”

Section: Introductionsupporting

confidence: 83%

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Yang

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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To elaborate on the relationship between sophisticated 2-D doping profile of drift region and device's breakdown behavior, a unified analytical model for the SOI LDMOS is developed in this paper. The Effective Substrate Voltage (ESV) concept is proposed so that the derivation of electric field and breakdown voltage can be simplified significantly. The ESV indicates that the influence of 2-D doping in the drift region can be equivalent to a virtual substrate potential. By using the proposed model, the role of 2-D drift doping, both continuous or discrete doping profile, in SOI LDMOSs' off-state breakdown behavior is investigated along with the TCAD simulations and experimental results. The good agreement between the analytical, measured and simulated results validates the accuracy of the developed model. A unified RESURF criterion is derived to idealize the electric field in the drift region and therefore maximize the breakdown voltage by optimizing the lateral and vertical drift doping profiles and geometric parameters. The proposed approach provides a universally applicable tool to explore the breakdown mechanism of SOI LDMOS with various drift doping profiles. INDEX TERMS LDMOS, arbitrary doping profile, electric field, breakdown voltage (BV).

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Section: Introductionsupporting

confidence: 83%

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Yang

Guo

Zhang

et al. 2020

IEEE J. Electron Devices Soc.

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“…This kind of concentration gradient is similar to the drift region zoning for a silicon LDMOS (lateral double diffusion metal oxide semiconductor). [23,24] The silicon is defined to dope into the AlGaN layer using ISE simulation software.…”

Section: Simulation Results and Discussionmentioning

confidence: 99%

Breakdown voltage analysis of Al _0.25 Ga _0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Duan¹,

Yang²

2012

Chinese Phys. B

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“…Moreover, the first peaks are higher than the corresponding peaks at the drain end for both SOI and PSOI structures, implying that the RESURF effect is hardly to be perfectly achieved under small device dimensions and uniform doping drift region. Better RESURF can be achieved in devices of larger dimensions (Hu et al, 2012;Luo et al, 2008Luo et al, , 2010 or linear doping drift region (Guo, Li, & Zhang, 2006;Merchant, 1991;Shengdong, Sin, Lai, & Ko, 1999;Tadikonda et al, 2004), in which the surface electric fields at the source and drain ends are more symmetric and uniform. Figure 4(b).…”

Section: International Journal Of Electronics 39mentioning

confidence: 98%

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

Wang

Chang

et al. 2013

International Journal of Electronics

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Thin-film (TF) lateral double-diffused metal-oxide-semiconductor field effect transistor (LDMOSFET or LDMOS) of small dimensions on partial silicon-on-insulator (PSOI) with improved breakdown voltage and suppressed kink effect is introduced and studied. The silicon window and field plate can modulate the surface electric field of silicon film and, thus, their design parameters can be adjusted to achieve optimal breakdown voltage. Moreover, the silicon window can also provide a conduction path from the thin silicon film to the substrate and prevent hole accumulation in the floating body of silicon-on-insulator (SOI) devices, which can consequently suppress the kink effect. Effects of the device parameters (e.g. location of the field plate, location of silicon window, and doping concentrations of the drift region, silicon window and substrate) that control the performance of TF PSOI LDMOS are carefully studied. Compared with the conventional TF SOI LDMOS of small dimensions, the simulation results show that this proposed TF PSOI LDMOS exhibits approximately 100% improvement on the breakdown voltage and entirely eliminates the kink effect.

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Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

Cited by 92 publications

References 8 publications

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Breakdown voltage analysis of Al _0.25 Ga _0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

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Numerical modeling of linear doping profiles for high-voltage thin-film SOI devices

Cited by 92 publications

References 8 publications

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

An Analytical Breakdown Model for the SOI LDMOS With Arbitrary Drift Doping Profile by Using Effective Substrate Voltage Method

Breakdown voltage analysis of Al 0.25 Ga 0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer

Thin-film LDMOS on partial SOI with improved breakdown voltage and suppressed kink effect

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Breakdown voltage analysis of Al _0.25 Ga _0.75 N/GaN high electron mobility transistors with partial silicon doping in the AlGaN layer