Numerical modeling study of the InP/InGaAs uni-travelling carrier photodiode

Characterization and optimization of high-power InGaAs/InP photodiodes

“…As a consequence, the band discontinuity in the conduction band at the step graded interface between the InGaAs layer and the InP layer become more pronounced and behaves as a barrier to impede the electrons from flowing out the absorption layers, which degrades the responsivity. This is similar to the case in UTC photodiodes (Srivastava et al 2004). This explains the falloff in the responsivity of our devices at about 18 mW and the falloff in the RF power at 8 mW.…”

“…Because both RF power degradation and responsivity degradation are caused by space charge effect, the saturation current is closely related to the photocurrent at which the responsivity begins to degrade. Due to the self-induced field, the responsivity always increases slightly with photocurrent at low optical injection level (Srivastava et al 2004), and then decrease when space charge effect becomes pronounced. So in the following we refer the photocurrent at which the responsivity reaches its peak as the "degradation current".…”

“…region (835 nm), and thus the capacitance, was kept constant. A cliff layer, which is a thin moderately doped n-type InP layer, is added between the semi-intrinsic InGaAs layer and the semi-intrinsic InP layer to reduce space charge effect (Srivastava et al 2004). The role of the cliff layer is shown in Fig.…”

Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In0.53Ga0.47As Absorbers for Optical Communications

“…Modeling and Optimization of Three-Dimensional Interdigitated Lateral p-i-n Photodiodes Based on In 0.53 Ga 0.47 As Absorbers for Optical Communications 75 , a uni-travelling photodiode (UTC-PD) (Srivastava & Roenker, 2003), a vertical photodiode (Jacob et al 2005) and a silicon-based lateral p-i-n photodiode (Menon, 2005). In this work, Silvaco Atlas was used, for the first time, to develop a three dimensional model of an interdigitated lateral p-i-n photodiode based on InGaAs.…”

“…The three dimensional analysis takes into account the following physical models; concentrationdependent minority carrier lifetime model, concentration and temperature-dependent mobility model, parallel field mobility, Shockley-Read-Hall (SRH) recombination model, Auger recombination model, optical generation/radiative recombination model and FermiDirac statistics. The material and model parameters were taken from periodical literature (Silvaco, 2004;Srivastava & Roenker, 2003;Adachi, 1992;Datta et al, 1998). Table 1 provides a summary of the material parameters used in this modelling (Menon et al 2010).…”