Numerical Simulation and Analytical Modeling of the Thermal Behavior of Single- and Double-Sided Cooled Power Modules

Catalano, Antonio Pio; Scognamillo, Ciro; d’Alessandro, V.; Castellazzi, Alberto

doi:10.1109/tcpmt.2020.3007146

Cited by 32 publications

(18 citation statements)

References 40 publications

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“…Concerning the Cu foils, the bottom one is kept plain to ensure a good thermal contact with the 3 mm-thick baseplate underneath (also made of Cu), while the layout of the top one is composed by metal islands in order to realize the circuit topology. The baseplate (i) provides mechanical stability to the assembly and (ii) improves the heat exchange between the devices and the cooling system placed underneath [9]. Electrical interconnections between Cu islands and devices are granted by aluminum (Al) wire bonds.…”

Section: Power Module Under Investigationmentioning

confidence: 99%

“…Four heat sources (one for each device) were considered to coincide with the active region of the transistors located on the top surface of the dies. Adiabatic boundary conditions were defined on all external surfaces except for the bottom baseplate one, on which a convective heat transfer coefficient h = 3 × 10 6 W/m 2 K was chosen to emulate the presence of a thermochuck (cold plate) [9]; it must be remarked that any h value can in principle be adopted to model the effect of different cooling solutions.…”

Section: Fantastic-based Thermal Modeling Including Nonlinear Effectsmentioning

confidence: 99%

“…This has led to the successful fabrication of multichip power modules (PMs) based on SiC MOSFETs, an example being presented in [7] for 3.3 kV VDMOS transistors; for this voltage class, the applications of which are the railway traction and wind power conversion, the replacement of Si with SiC is expected to have relevant benefits that allow justifying the higher technology cost. SiC PMs represent a breakthrough with respect to PCB-integrated power circuits [8] and are prone to be incorporated in any kind of converter topology; on the other hand, they require a careful design to efficiently handle (i) the considerable power density dissipated by devices and (ii) their high switching frequency [9]. Consequently, PM designers should pay attention to electrothermal (ET) effects and impact of parasitics [10,11].…”

Section: Introductionmentioning

confidence: 99%

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Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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In this paper, an advanced electrothermal simulation strategy is applied to a 3.3 kV silicon carbide MOSFET power module. The approach is based on a full circuital representation of the module, where use is made of the thermal equivalent of the Ohm’s law. The individual transistors are described with subcircuits, while the dynamic power-temperature feedback is accounted for through an equivalent thermal network enriched with controlled sources enabling nonlinear thermal effects. A synchronous step-up DC-DC converter and a single-phase inverter, both incorporating the aforementioned power module, are simulated. Good accuracy was ensured by considering electromagnetic effects due to parasitics, which were experimentally extracted in a preliminary stage. Low CPU times are needed, and no convergence issues are encountered in spite of the high switching frequencies. The impact of some key parameters is effortlessly quantified. The analysis witnesses the efficiency and versatility of the approach, and suggests its adoption for design, analysis, and synthesis of high-frequency power converters in wide-band-gap semiconductor technology.

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Section: Power Module Under Investigationmentioning

confidence: 99%

Section: Fantastic-based Thermal Modeling Including Nonlinear Effectsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

et al. 2021

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“…From the perspective of an engineer, when designing a cooling system, it is important to choose an optimal configuration of such a system. Computer modelling may help to solve the problem of selecting an optimal cooling system and to design it [37][38][39][40].…”

Section: Introductionmentioning

confidence: 99%

Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices

Posobkiewicz

Górecki

2021

Electronics

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The paper presents some investigation results on the properties of forced cooling systems dedicated to electronic devices. Different structures of such systems, including Peltier modules, heat sinks, fans, and thermal interfaces, are considered. Compact thermal models of such systems are formulated. These models take into account a multipath heat transfer and make it possible to compute waveforms of the device’s internal temperature at selected values of the power dissipated in the device. The analytical formulas describing the dependences of the thermal resistance of electronic devices co-operating with the considered cooling systems on the power dissipated in the cooled electronic device and the power feeding the Peltier module and the speed of airflow caused by a fan are proposed. The correctness of the proposed models is verified experimentally in a wide range of powers dissipated in electronic devices operating in different configurations of the used cooling system.

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“…Another proposal to improve dissipation is to modify the packs to dissipate heat on both sides, top and bottom. This proposal has been made for power converters based on silicon [16] and SiC devices [17][18][19]. This dissipation method improves the dissipation of the converter but significantly increases its volume, so it is not a valuable proposal for the small GaN-based converters.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

et al. 2021

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The design of a cooling system is critical in power converters based on wide-bandgap (WBG) semiconductors. The use of gallium nitride enhancement-mode high-electron-mobility transistors (GaN e-HEMTs) is particularly challenging due to their small size and high power capability. In this paper, we model, study and compare the different heat dissipation systems proposed for high power density GaN-based power converters. Two dissipation systems are analysed in detail: bottom-side dissipation using thermal vias and top-side dissipation using different thermal interface materials. The effectiveness of both dissipation techniques is analysed using MATLAB/Simulink and PLECS. Furthermore, the impact of the dissipation system on the parasitic elements of the converter is studied using advanced design systems (ADS). The experimental results of the GaN-based converters show the effectiveness of the analysed heat dissipation systems and how top-side cooled converters have the lowest parasitic inductance among the studied power converters.

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Numerical Simulation and Analytical Modeling of the Thermal Behavior of Single- and Double-Sided Cooled Power Modules

Cited by 32 publications

References 40 publications

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Compact Modeling of a 3.3 kV SiC MOSFET Power Module for Detailed Circuit-Level Electrothermal Simulations Including Parasitics

Influence of Selected Factors on Thermal Parameters of the Components of Forced Cooling Systems of Electronic Devices

Effect of the Heat Dissipation System on Hard-Switching GaN-Based Power Converters for Energy Conversion

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