Numerical simulation and comparison of electrical characteristics between uniaxial strained bulk and SOI FinFETs

Abstract

In this paper, electrical characteristics of 25 nm strained fin-typed field effect transistors (FinFETs) with oxide-nitride-stacked-capping layer are numerically studied. The FinFETs are fabricated on two different wafers, one is bulk silicon and the other is silicon-on-insulator (SOI) substrate. A three-dimensional device simulation is performed by solving a set of density-gradient-hydrodynamic equations to study device performance including, such as the drain current characteristics (the I D -V G and I D -V D curves), the drain-induced barrier height lowering, and the subthreshold swing. Comparison between the strained bulk and SOI FinFETs shows that the strained bulk FinFET is promising for emerging multiple-gate nanodevice era according to the manufacturability point of view.

Comparison of the Electrostatics of Bulk and SOI Trigate MOSFETs

“…Bulk and SOI technologies have been experimentally compared in planar devices (6) and FinFETs (3,4,7). However, a comprehensive study of the electrostatic behavior of MuG devices fabricated on bulk and SOI wafers is still needed.…”