Numerical Simulation for Optimization of ZnTe-Based Thin-Film Heterojunction Solar Cells with Different Metal Chalcogenide Buffer Layers Replacements: SCAPS-1D Simulation Program

Abstract

In this study, Zinc Telluride (ZnTe)-based solar cells, which are metallic dichalcogenide materials, are used as a solar cell absorbent with the formation appropriate for solar cell use. The data has been analyzed by SCAPS-1D structures software. The replacement of Cadmium Sulfide CdS (buffer) layer by other green and save suitable materials has been investigated. The substituted buffer layers have been ZnSe, ZnS, CdSe, and In 2 S 3 . The higher device performance efficiency parameters have been found out when using CdS and ZnSe as buffer layers. SCAPS-1D shows that the optimal p-n junction device eff]iciency parameters have been achieved when the ZnTe (absorber) layer thickness is between 1200-1500 nm, while the ZnSe (buffer) layer thickness is between 20-60 nm, and the thickness of ZnO:Al (window) layer is 25 nm. The results of the simulation provide important hints that may enhance the performance of the cell with empirical studies useful in practical implementation.

An overview on the role of ZnTe as an efficient interface in CdTe thin film solar cells: a review

“…Thin film solar cells can be developed with better efficiency and stability by optimizing the thickness and properties of their different constituent layers, i.e., window, absorber, buffer and contact layers. As stated, a variety of deposition techniques has been employed thus far to grow the constituent layers, which are classified as follows: (a) physical and (b) chemical routes, where the resistive heating thermal evaporation, electron beam evaporation, molecular beam epitaxy, sputtering, and electrodeposition techniques have been used thus far for the fabrication of ZnTe thin films, [82][83][84][85][86][87][88][89][90][91][92][93][94][95][96][97] providing diverse properties. An overview of the physical and chemical routes is presented in Fig.…”

Numerical Modeling of High Conversion Efficiency FTO/ZnO/CdS/CZTS/MO Thin Film-Based Solar Cells: Using SCAPS-1D Software

“…Figure 10a shows the CZTS absorber layer (E g = 1.45 eV) from 0 to 2.4 µm, the CdS buffer layer (E g = 2.4 eV), the ZnO window layer (E g = 3.3 eV) from 2.425 to 2.545 µm, and the FTO layer (E g = 3.5 eV) from 2.545 to 2.825 µm. A "cliff" type band alignment occurs when the absorber layer's conduction band is higher than the buffer layer's conduction band [48]. This is the case of CZTS as a thin film absorber, as seen in Figure 10b.…”

Optimization of Doping Levels and Emitter Thickness in Silicon Solar Cells to Minimize Auger Recombination Effects

“…Auger coefficient for electrons, holes, m 6 . s -1 Dn,p Diffusion constant for electrons, holes, m Doping threshold for open-circuit voltage for j th emitter thickness layer, m -3 Nƞ Doping threshold for conversion efficiency, m -3 Nƞ (j) Doping threshold for conversion efficiency for j th emitter thickness layer, m -3 NFF Doping threshold for fill factor, m -3 NFF (j) Doping threshold for fill factor, for j th emitter thickness layer, m -3 q Electric charge, C Pi Total power in the light incident on the cell per unit area, W/m² rAuger Auger recombination rate, m -3 .…”

“…Various solutions have been proposed to circumvent this issue, including perovskite-silicon tandems or multi-junction technologies [4][5][6], double-sided cell architectures [7][8][9][10][11], and emitter region optimization approaches [12][13][14]. Upon scrutiny, multi-junction structures' most glaring disadvantage is their relatively high-cost compared to unijunction cell technologies.…”