Numerical simulation of bowing phenomenon in ultra-thin crystalline silicon solar cells

Yoon, Philyoung; Baek, Tae-Hyeon; Chung, Haseung; Song, Hyunwook; Shin, Seungwon

doi:10.1016/j.solener.2014.04.027

Cited by 15 publications

(7 citation statements)

References 10 publications

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“…The detailed process of the numerical simulation was described in our previous paper [13], and here we briefly summarize the overall procedure. As described in Fig.…”

Section: Brief Summary Of Developed Numerical Proceduresmentioning

confidence: 99%

“…The silicon solar cell was initially heated up to the target temperature and then cooled down to room temperature by convection. A more detailed explanation on the recrystallized layer as well as a description of the simulation setup can be found elsewhere [13].…”

Section: Brief Summary Of Developed Numerical Proceduresmentioning

confidence: 99%

“…DOE analysis can further elucidate the interaction behavior between these dominant variables. The numerical technique developed and validated in our previous study was used here [13].…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Investigation of the controlling parameters on the bowing phenomenon in ultra-thin crystalline silicon solar cells

Yoon¹,

Chung

Song

et al. 2015

Applied Thermal Engineering

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“…The detailed process of the numerical simulation was described in our previous paper [13], and here we briefly summarize the overall procedure. As described in Fig.…”

Section: Brief Summary Of Developed Numerical Proceduresmentioning

confidence: 99%

Section: Brief Summary Of Developed Numerical Proceduresmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of the controlling parameters on the bowing phenomenon in ultra-thin crystalline silicon solar cells

Yoon¹,

Chung

Song

et al. 2015

Applied Thermal Engineering

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“…Typically, bowing and residual stress occurs during the fabrication of c-Si solar cells; back-surface field (BSF) formation. The degree of wafer bowing strongly depends on the thermal conditions during Al paste sintering [8]. This pehenomenon arises from mismatch of the thermal coefficient of expansion (TCE) between the silicon and the rear contact aluminum layers [9,10].…”

Section: Introductionmentioning

confidence: 99%

Electrical investigation of ITO films in Al-doped crystalline silicon solar cells

Hamid

Sinin

Ahir

et al. 2020

Mater. Res. Express

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Low temperature processing of crystalline Si solar cells is attractive due to lower wafer and manufacturing costs. For thinner silicon wafers, thermal mismatch between Al and Si at high temperatures leads to thermal stress and wafer bowing. In this paper, replacement of back surface Al BSF contact by ITO films has been investigated as a function of Al-doping level. ITO films were deposited on back Si surfaces with sheet resistances in ∼16-48Ω/, range. ITO/Si contact resistance increases slightly as sheet resistance is reduced, however, the variation is not significant. At sheet resistance of 25Ω/,, solar cell performance comparable to conventional AL BSF configuration. Even at sheet resistance ∼50Ω/,, it is possible to form high quality ITO/Si contact. The role of surface defects has been deemed to be critical. Without etching of Al-doped surface, surface quality is poor due to defects originating from the Al-alloy formation. As these defects are removed with controlled etching, a more pristine surface emerges that forms superior contacts with ITO film.

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“…The results revealed that the bowing degree increased with the decrease in the silicon layer thickness and increase in the aluminium layer thickness. 9 The longer life and greater reliability of satellites has put forward higher requirements for solar cells; both the property and the amount of adhesive are important factors affecting the performance of modern satellites. [10][11][12] In order to investigate the residual stress of the solar cell module after encapsulation, the distribution and evolution of the residual stress will be simulated during its encapsulation process with the finite element method, and the impacts of the encapsulation process parameters, such as the elastic modulus, the thickness of adhesive, and the curing temperature on the residual stress will be investigated.…”

Section: Introductionmentioning

confidence: 99%

Effects of the Curing Process on the Residual Stress in Solar Cell Module

Wang

Gao

et al. 2016

Kem. Ind.

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Panels using solar power require high reliability, and the residual stress in the solar panel has an important effect on its reliability and lifetime. The finite element method was adopted to simulate the impacts of the rectangular solar panel encapsulation process parameters, such as the elastic modulus, the thickness of adhesive, and the curing temperature on the residual stress in the solar cell module. The results show that the residual stress in the solar cell module increases linearly with the increase in these three factors. The residual strain is consistent with that of the stress. The generation mechanism and distribution evolution of stress are discussed in detail. Both the thickness and the elastic modulus of the silicone rubber have significant impact on the residual stress. However, the influence of the curing temperature is less observable.

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Numerical simulation of bowing phenomenon in ultra-thin crystalline silicon solar cells

Cited by 15 publications

References 10 publications

Investigation of the controlling parameters on the bowing phenomenon in ultra-thin crystalline silicon solar cells

Investigation of the controlling parameters on the bowing phenomenon in ultra-thin crystalline silicon solar cells

Electrical investigation of ITO films in Al-doped crystalline silicon solar cells

Effects of the Curing Process on the Residual Stress in Solar Cell Module

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