Numerical simulation of crystal growth: Influence of melt convection on global heat transfer and interface shape

Ryckmans, Y.; Nicodeme, P.; Dupret, François

doi:10.1016/s0022-0248(08)80010-3

Cited by 22 publications

(2 citation statements)

References 8 publications

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“…The influence of melt motion on heat transfer in the molten material is taken into account with the natural incompressible convection using the Boussinesq approximation. 14 Only argon gas is considered transparent (the other solid parts are set as opaque materials) and the internal radiation of the melt and crystal is ignored. The thermo-physical properties of the furnace are constant except for germanium (see Tables 1 and 2 (ref.…”

Section: Governing Equationsmentioning

confidence: 99%

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

2016

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The mass and heat transfer in an inductively heated Czochralski crystal growth furnace during a crystal growth process is investigated numerically for a germanium semiconductor. The RF coil position is fixed at all growth stages. The results show that the temperature and velocity fields are changed, and the convexity of the crystal-melt interface increases with the grown crystal length. The temperature difference in the melt is about 50-60 K and the melt at the bottom of the crucible is crystallized.

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Section: Governing Equationsmentioning

confidence: 99%

Global simulation of an RF Czochralski furnace during different stages of germanium single crystal growth

2016

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“…For this reason, the metal and semiconductor industries have developed systems intended to control both solidification rates and temperature gradients. Essentially, two processes are used, the Bridgman process [3] and the Czochralski process [4]. They involve very complex phenomena combining the various types of heat transfer in different materials.…”

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confidence: 99%