Numerical simulation of GaAs MESFETS including velocity overshoot

The influence of nonstationary carrier transport on the bandwidth of p-i-n photodiode

“…where and are the phenomenological values of electron transfer times from valley (1) to valley (2) and vice versa [5], [6].…”

“…This model is able to take into account the change of the electric field caused by space charge of photogenerated carriers and also the influence of bias voltage variation and nonstationary effects caused by electron intervalley transfer. The complete phenomenological model of transport equations allows for electron intervalley transfer, which can be very important in submicron and micron devices [6]. Using this model, we show that, as the thickness of the absorption layer varies, the bandwidth can have more than one maximum, particularly for lower bias voltages and low energies of the incident pulse.…”

Optimization of a resonant cavity enhanced MSM photodetector

“…The phenomenological model of the transport equations employed in this work represents an approximation of the hydrodynamic model of the transport equations for a two-valley semiconductor [7]. This model is derived from the hydrodynamic model under the assumption that the local carrier equilibrium is achieved much faster than the equilibrium distribution of concentration between valleys [8][9][10]. It follows that carrier transport in each separate valley can be described by the drift-diffusion relation and the continuity equation, where the intervalley transfer is described by transfer times, according to the hydrodynamic model [7].…”

“…It was thus of interest to develop a numerically more convenient model, that would simultaneously model the response of both micron and submicron-sized MSM photodetectors. The model which largely satisfies this requirement for the two-valley semiconductors is the phenomenological model of transport equations [7][8][9][10][11][12][13][14][15][16].…”

Application of Conformal Mapping in Modelling the Response of an MSM Photodetector

“…The model which largely satisfies these requirements for two-valley semiconductors is the phenomenological model of transport equations. [4][5][6][7] 2. MODELLING…”