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Sub-40nm Lgate asymmetric halo and source/drain extension transistors have been integrated into leading-edge 65 nm and 45 nm PD-SOI CMOS technologies. With optimization, the asymmetric NMOS and PMOS saturation drive currents improve up to 12 % and 10 %, respectively, resulting in performance at 1.0 V and 100 nA/µm IOFF of NIDSAT = 1354 µA/µm and PIDSAT = 857 µA/µm. Product-level implementation of asymmetric transistors showed a speed benefit of 12 %, at matched yield and improved reliability.

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