A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Meixner, Ronald M.; Göbel, Holger; Qiu, H.; Ucurum, C.; Klix, W.; Stenzel, R.; Yildirim, F. A.; Bauhofer, W.; Krautschneider, Wolfgang H.

doi:10.1109/ted.2008.925339

Cited by 23 publications

(10 citation statements)

References 10 publications

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“…In this sense, recent advances were made to improve detrimental effects such as poor mobility [12,13,14,15], high process variability [16], non-flexible electrodes [17] or parasitic contact effects [18,19,20,21]. In parallel, many groups have been working in order to develop a universal compact model for OTFTs that incorporates the limitations and physical peculiarities of organic semiconductors [22,23,24,25,26,27,28,29,30,31,32,33,34]. Analyses of the features of different compact models were recently reviewed [35,36].…”

Section: Introductionmentioning

confidence: 99%

Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine

et al. 2019

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In this work, the topic of the detrimental contact effects in organic thin-film transistors (OTFTs) is revisited. In this case, contact effects are considered as a tool to enhance the characterization procedures of OTFTs, achieving more accurate values for the fundamental parameters of the transistor threshold voltage, carrier mobility and on-off current ratio. The contact region is also seen as a fundamental part of the device which is sensitive to physical, chemical and fabrication variables. A compact model for OTFTs, which includes the effects of the contacts, and a recent proposal of an associated evolutionary parameter extraction procedure are reviewed. Both the model and the procedure are used to assess the effect of the annealing temperature on a nickel-1,4,8,11,15,18,22,25-octakis(hexyl)phthalocyanine (NiPc6)-based OTFT. A review of the importance of phthalocyanines in organic electronics is also provided. The characterization of the contact region in NiPc6 OTFTs complements the results extracted from other physical–chemical techniques such as differential scanning calorimetry or atomic force microscopy, in which the transition from crystal to columnar mesophase imposes a limit for the optimum performance of the annealed OTFTs.

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Section: Introductionmentioning

confidence: 99%

Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine

et al. 2019

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“…Another challenge to be faced with when developing models of OFETs is the possibility to convert physical models into SPICE-equivalent compact models. Whenever this is possible and accurate enough for representing the real behavior of OFET devices in their different working regimes, the equivalent compact model will inevitably result in a much more efficient tool for simulation and faster design of circuits at relatively high level of complexity, still making use of standard approaches for circuit design and simulation [14]. In the field of TFTs, in fact, given the diversity of device architectures, materials and fabrication technologies, creating one compact device model fitting all possible options remains an open challenge and the need of developing SPICEequivalent standard models while extracting parameters from electrical device characterization is evident [15].…”

Section: Introductionmentioning

confidence: 99%

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

Valletta

Demirkol

Maira

et al. 2016

IEEE Trans. Nanotechnology

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This work introduces a compact DC model developed for Organic Thin Film Transistors (OTFTs) and its SPICE implementation. The model relies on a modified version of the Gradual Channel Approximation (GCA) that takes into account the contact effects, occurring at non-ohmic metal/organic semiconductor junctions, modeling them as reverse biased Schottky diodes. The model also comprises channel length modulation and scalability of drain current with respect to channel length. To show the suitability of the model, we used it to design an inverter and a ring oscillator circuit. Furthermore, an experimental validation of the OTFTs has been done at the level of the single device as well as with a discrete-component setup based on two OTFTs connected into an inverter configuration. The experimental tests were based on OTFTs that use small molecules in binder matrix as an active layer. The experimental data on the fabricated devices have been found in good agreement with SPICE simulation results, paving the way to the use of the model and the device for the design of OTFT-based integrated circuits.

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“…Several OTFTs models for circuit simulation have been reported preciously [6]- [14] and are briefly described in the following. A V th -based SPICE model for OTFTs, adapting the standard Berkeley Shortchannel IGFET Model (BSIM) equations, was developed by Meixner et al [7]. A DC model, using modified V th -based model equations for amorphous silicon TFTs (AIM-SPICE Level 15), was developed by Horowitz's group [8].…”

Section: Introductionmentioning

confidence: 99%

A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices

Maiti

Hayashi

Chen

et al. 2014

IEEE Trans. Semicond. Manufact.

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A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

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A Physical-Based PSPICE Compact Model for Poly(3-hexylthiophene) Organic Field-Effect Transistors

Cited by 23 publications

References 10 publications

Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine

Evolutionary Computation for Parameter Extraction of Organic Thin-Film Transistors Using Newly Synthesized Liquid Crystalline Nickel Phthalocyanine

A Compact SPICE Model for Organic TFTs and Applications to Logic Circuit Design

A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices

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