“…Multiscale/multiphysics simulations are highly sought after in the analysis of electronic and optoelectronics devices such as III–V LEDs, organic diodes, transistors, and nanowire FETs. , TiberCad is one of the pioneering tools capable of addressing this need, spanning FEM continuous models to atomistic descriptions. The numerical modeling of the solar cell was conducted using TiberCAD Software and is based on the semiclassical drift-diffusion transport model, which consists of the continuity equations of electrons (2) and holes (3) coupled via the Poisson eq as follows: where x represents the spatial coordinate along the material stack, q represents the electronic charge, G represents the generation rate, D represents the diffusion coefficient, ε represents the dielectric permittivity, E represents the electric field, ϕ represents the electrostatic potential, n ( x ) represents the number of free electrons, p ( x ) represents the number of holes, n t ( x ) represents the number of trapped electrons, p t ( x ) represents the number of trapped holes, N d+ represents the ionized donor doping concentration, and N a– represents the acceptor ionized doping concentration.…”