Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit

Curow, M.; Hintz, Andrew

doi:10.1109/t-ed.1987.23185

Cited by 30 publications

(5 citation statements)

References 19 publications

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“…One of the earliest numerical simulations of oscillations in a GaAs diode is due to Curow and Hintz [14]. They adopted a single-valley model of the Bløtekjaer type to investigate Gunn devices in harmonic mode oscillator circuits.…”

Section: Numerical Studies Of Gunn Oscillatorsmentioning

confidence: 99%

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Two‐valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

Anile

Hern

2002

VLSI Design

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To accurately describe non-stationary carrier transport in GaAs devices, it is necessary to use Monte Carlo methods or hydrodynamical (or energy transport) models which incorporate population transfer between valleys.We present here simulations of Gunn oscillations in a GaAs diode based on two-valley hydrodynamical models: the classic Bløtekjær model and two recently developed moment expansion models. Scattering parameters within the models are obtained from homogeneous Monte Carlo simulations, and these are compared against expressions in the literature. Comparisons are made between our hydrodynamical results, existing work, and direct Monte Carlo simulations of the oscillator device.

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Section: Numerical Studies Of Gunn Oscillatorsmentioning

confidence: 99%

“…The initial state of the device is given by Eqs. (13) and (14), and the boundary conditions by Eq. (15).…”

Section: Device Behaviour At Steady Statementioning

confidence: 99%

Two‐valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

Anile

Hern

2002

VLSI Design

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“…Therefore, when considering upper minima their energy separation from the bottom of the conduction band is added to the kinetic energy ε i (p) of each minimum i. The BE are widely used for various purposes such as: the analysis of transient response and overshoot phenomena [34], the determination of large-signal a.c. response [35][36][37], the calculation of linear characteristics [38][39][40], etc. In the present work, most attention is paid to the investigation of the time and frequency behaviour of the response and the velocity fluctuations of hot carriers.…”

Section: Derivation Of the Balance Equationsmentioning

confidence: 99%

Modelling of small-signal response and electronic noise in semiconductor high-field transport

Reggiani

Starikov

Shiktorov

et al. 1997

Semicond. Sci. Technol.

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We present a survey on the theoretical modelling of the small-signal response and noise associated with velocity fluctuations in semiconductor high-field transport. Because of the high values of the applied electric field, current-voltage characteristics and electrical noise are found to deviate strongly from Ohm's law and Nyquist's relation respectively. Accordingly, in the case of homogeneous (bulk) structures the field and frequency dependence of the differential mobility, diffusivity and electronic noise temperature are investigated within a rigorous microscopic approach which solves exactly the appropriate kinetic equations through analytical and Monte Carlo techniques. Spectral functions in the frequency domain are obtained from their correspondent response and correlation functions in the time domain. The subject is also analysed within a balance-equation approach which enables us to obtain simple analytical expressions which can provide a direct microscopic interpretation and can be applied to device modelling. For validation purposes calculations are applied to the relevant case of holes in Si and electrons in GaAs. In the latter material the presence of negative differential conductivity (Gunn effect) leads to interesting behaviour of the small-signal response and noise spectra which are also investigated for the simplest prototype of non-homogeneous structures, that is the n + nn + diode. The comparison between the different approaches so developed and between calculations and experiments is found to be quite good, thus providing a quantitative microscopic interpretation of the main features associated with small-signal response and fluctuations in semiconductors under high-field conditions. Nomenclaturea.c. alternating current (dynamic state) BE balance equations d.c. constant current (static state) HD hydrodynamics MC Monte Carlo NDM negative differential mobility

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“…The voltage fluctuations at electrode k due to the local noise source at mesh point (i.j) are given by øk ZDI(i,j)J?l(i,f) (5) If the impedance distribution Z1(i,j) usually called the impedance field, is known at all mesh points the resulting voltage fluctuations are obtained by direct summation. Here the impedance field is calculated at all mesh points simultaneously by applying the reciprocity principle assuming the system to be linear [13][14].…”

Section: Determination Of Terminal Current and Voltage Fluctuationsmentioning

confidence: 99%

Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators

Abou‐Elnour

2003

SPIE Proceedings

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The noise performance of sub-quarter micrometer gate length FETs is determined by using physical simulators. The hydrodynamic transport model equations are linearized and efficiently solved in two dimensions to determine the smallsignal parameters and the minimum noise figure up to frequencies near the device cut-off frequency. For higher frequencies. the noise performance is obtained by using a two-dimensional Monte-Carlo code which fully takes into account the non-stationary transport properties and quantization effects. The relation between the terminal noise currents and the internally generated noise at the different device regions are detennined. Different device structures are simulated and the obtained results are compared with experimental data.

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Numerical simulation of nonstationary electron transport in Gunn devices in a harmonic mode oscillator circuit

Cited by 30 publications

References 19 publications

Two‐valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

Two‐valley Hydrodynamical Models for Electron Transport in Gallium Arsenide: Simulation of Gunn Oscillations

Modelling of small-signal response and electronic noise in semiconductor high-field transport

Accurate modeling of noise parameters in subquarter-micrometer gate FETs using physical simulators

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