Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

Li, Yiming; Lee, Jam Wem; Tang, Ting-Wei; Chao, Tien Sheng; Lei, Tan Fu; Sze, Simon M.

doi:10.1016/s0010-4655(02)00248-5

Cited by 21 publications

(26 citation statements)

References 9 publications

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“…In the numerical solution of such nonlinear Poisson equations, both Newton and monotone iterative methods [29] are used to solve this new quantum correction Poisson equation, and have good convergence properties. Among different quantum correction models, such as Hänsch, MLDA, effective potential, densitygradient model, the calculation result with our model is most close to SP results for a MOS structure simulation [14][15][16][17][18][19][20][21][22][23][24][25][26][27]. Compared to the SP results, prediction of the proposed equation is within 3% accuracy.…”

Section: Introductionmentioning

confidence: 54%

“…As shown in figure 1, a poly-oxide-silicon MOS structure is simulated with the coupled SP equations self-consistently along the longitudinal direction (z-axis) from the interface of Si/SiO 2 with the silicon substrate [9][10][11][12][13][14][15]. For simplicity in the model construction, the SP equations considered here are assumed to have no wave penetration at the interface of Si/SiO 2 [9][10][11][12][13][14][15]. SP equations are discretized by the finite volume method [13,14,29].…”

Section: Quantum Correction Poisson Equationmentioning

confidence: 99%

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A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation

Li¹

2004

Semicond. Sci. Technol.

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In this paper, we present a quantum correction Poisson equation for metal-oxide-semiconductor (MOS) structures under inversion conditions. Based on the numerical solution of Schrödinger-Poisson (SP) equations, the new Poisson equation developed is optimized with respect to (1) the position of the charge concentration peak, (2) the maximum of the charge concentration, (3) the total inversion charge sheet density Q, and (4) the average inversion charge depth X. Instead of solving a set of coupled SP equations, this physically-based Poisson equation characterizes the quantum confinement effects of the MOS structure from the interface of silicon and oxide (Si/SiO 2) with the silicon substrate. It successfully predicts distribution of the electron density in inversion layers for MOS structures with various oxide thicknesses T ox and applied gate voltages V G. Compared to SP results, the prediction of the proposed equation is within 3% accuracy. Application of this equation to the capacitance-voltage measurement of an n-type metal-oxide-semiconductor field effect transistor (MOSFET) produces an excellent agreement. This quantum correction Poisson equation can be solved together with transport equations, such as drift-diffusion, hydrodynamic and Boltzmann transport equations without encountering numerical difficulties. It is feasible for nanoscale MOSFET simulation.

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Section: Introductionmentioning

confidence: 54%

Section: Quantum Correction Poisson Equationmentioning

confidence: 99%

A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation

Li¹

2004

Semicond. Sci. Technol.

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“…The oxide thickness is fixed at 1 nm for all structures [1][2][3][4][5][6][7][8][9][10][11][12][13][14]. Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Because these devices are in the nanoscale regime, it has become necessary to include quantum mechanical (QM) effects when modeling device behavior; in particular, for such sub-100 nm devices. There have been several approaches to the modeling of QM effects [8][9][10][11][12][13][14]. Among them, full QM methodology physically plays an accurate way to simulate nanodevices.…”

Section: Computational Modelmentioning

confidence: 99%

“…In this paper, we compare electrical characteristics for sub-10 nm SG, DG, and AG SOI metal-oxide-semiconductor field effect transistors (MOSFETs) using a quantum mechanical simulation. Based on our own nanodevice simulator, devices with different channel lengths (L g ) and silicon film thicknesses (T si ) are simulated and analyzed to have an optimal configuration [8][9][10][11][12][13][14]. We conclude that the silicon film thickness pays an important factor in eliminating SCE.…”

Section: Introductionmentioning

confidence: 99%

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Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

Li¹,

Lee²,

Chou

2004

Simulation of Semiconductor Processes and Devices 2004

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In this paper, electrical characteristics of nanoscale single-, double-, and all-around-gate silicon-0n-insulator (SOI) devices are computational investigated by using a quantum mechanical simulation. Considering several important properties, such as on/off current ratio, drain induced channel barrier height lowering, threshold voltage roll off, and subthreshold swing, geometry aspect ratio is systematically calculated and characterized among structures. To obtain good operation characteristics, the ratio of channel length and silicon film thickness should be optimized with respect to device structures.

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Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs

Chen

2006

J Comput Electron

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In this paper, electrical characteristics of metaloxide-semiconductor field effect transistor (MOSFET) with silicon/gallium-arsenic (Si/GaAs) stacked film are numerically studied. By calculating several important device characteristics, such as the on-state current, the subthreshold swing, the drain induced barrier lowering, the threshold voltage, the threshold voltage roll-off, and the output resistance, a 50 nm Si/GaAs MOSFET is simulated with respect to different thicknesses of Si/GaAs film. Compared with the results of pure Si MOSFET, Si/GaAs MOSFET shows promising characteristics after properly selecting the thickness of Si/GaAs film. Among Si, germanium (Ge), and Si/Ge MOSFETs, Si/GaAs MOSFET relatively exhibits a higher driving capability due to higher carrier mobility within the Si/GaAs film. However, quantitatively accurate estimation of device characteristics will depend upon more precise calculation of band structure of the stacked film.

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Numerical simulation of quantum effects in high-k gate dielectric MOS structures using quantum mechanical models

Cited by 21 publications

References 9 publications

A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation

A quantum correction Poisson equation for metal–oxide–semiconductor structure simulation

Comparison of Nanoscale Metal-Oxide-Semiconductor Field Effect Transistors

Numerical simulation of electrical characteristics in nanoscale Si/GaAs MOSFETs

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