Numerical simulation of the 3ω method for measuring the thermal conductivity

Jacquot, A.; Lenoir, Bertrand; Dauscher, A.; Stölzer, M.; Meusel, J.

doi:10.1063/1.1459611

Cited by 80 publications

(36 citation statements)

References 28 publications

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“…The SiN x results compare well with previously published work on films that have comparable thicknesses [8]. For Al, our value is in agreement with trends described in previous reports, as well as with the result obtained by using electrical resistivity measurement and applying the Wiedemann-Franz law [8], [13], [19], [21], [22], [29].…”

Section: Discussionsupporting

confidence: 82%

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Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures and Finite-Element-Model-Based Data Analysis

Stojanović

Yun

Washington

et al. 2007

J. Microelectromech. Syst.

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Abstract-We present a new method for measuring thermal conductivities of films with nanoscale thickness. The method combines a microelectrothermal test structure with a finite-elementbased data analysis procedure. The test device consists of two serpentine nickel structures, which serve as resistive heaters and resistance temperature detectors, on top of the sample. The sample is supported by a silicon nitride membrane. Analytical solution of the heat flow is infeasible, making interpretation of the data difficult. To address this, we use a finite-element model of the test structure and apply nonlinear least-squares estimation to extract the desired material parameter values. The approach permits simultaneous extraction of multiple parameters. We demonstrate our technique by simultaneously obtaining the thermal conductivity of a 280 µm× 80 µm× 140 nm thick aluminum sample and the 360 µm× 160 µm× 180 nm thick silicon nitride support membrane. The thermal conductivity measured for the silicon nitride thin film is 2.1 W/mK, which is in agreement with reported values for films of this thickness. The thermal conductivity of the Al thin film is found to be 94 W/mK, which is significantly lower than reported bulk values and consistent both with reported trends for thin metallic films and with values that were obtained using electrical resistivity measurements and the WiedemannFranz law.[

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Section: Discussionsupporting

confidence: 82%

“…Another possibility, which has not been fully explored, is to relax the need for analytical solution of the heat transfer by using FEA models. FEA has been shown to be a reliable tool for analysis of microfabricated thermal measurement systems [21], [22]. For example, La Spina et al use FEA to characterize the geometry of heat flow through their device [13].…”

mentioning

confidence: 99%

Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures and Finite-Element-Model-Based Data Analysis

Stojanović

Yun

Washington

et al. 2007

J. Microelectromech. Syst.

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“…16,31 In addition, one needs t << the thermal wavelength in the film 16 and κ app < κ sub . 22 Copper strips (~ 50 nm thick, L = 6mm long, w = 50μm wide, resistances ~ few hundred ohms) as heaters/thermometers were evaporated through a shadow mask on the samples (bare substrates or thin films). The metal strip requires a fairly large temperature coefficient of resistance to generate a measurable resistance change as a function of temperature.…”

Section: Experimental Techniquementioning

confidence: 99%

Thermal resistances of thin films of small molecule organic semiconductors

et al. 2016

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Abstract:We have measured the thermal resistances of thin films of the small molecule organic semiconductors bis(triisopropylsilylethynyl) pentacene (TIPS-pn), bis(triethylsilylethynyl) anthradithiophene (TES-ADT) and difluoro bis(triethylsilylethynyl) anthradithiophene (diF-TES-ADT). For each material, several films of different thicknesses have been measured to separate the effects of intrinsic thermal conductivity from interface thermal resistance. For sublimed films of TIPS-pn and diF-TES-ADT, with thicknesses ranging from < 100 nm to > 4 µm, the thermal conductivities are similar to that of polymers and over an order of magnitude smaller than that of single crystals, presumably reflecting the large reduction in phonon mean-free path in the films. For thin (≤ 205 nm) crystalline films of TES-ADT, prepared by vapor-annealing spin-cast films, the thermal resistances are dominated by interface scattering.

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“…In the 3v method [61][62][63][64][65], an AC current IðtÞ ¼ I 0 cosðvtÞ with frequency v and amplitude I 0 is passed through the deposited metal strip. Assuming that the resistance of the metal strip is R h and it is linearly temperature dependent, we find that …”

Section: The 3v Methodsmentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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Numerical simulation of the 3ω method for measuring the thermal conductivity

Cited by 80 publications

References 28 publications

Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures and Finite-Element-Model-Based Data Analysis

Thin-Film Thermal Conductivity Measurement Using Microelectrothermal Test Structures and Finite-Element-Model-Based Data Analysis

Thermal resistances of thin films of small molecule organic semiconductors

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

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