Numerical Simulation of Tin Based Perovskite Solar Cell: Effects of Absorber Parameters and Hole Transport Materials

Toshniwal, Aditi; Jariwala, Akshay; Kheraj, Vipul; Opanasyuk, A. S.; Panchal, C. J.

doi:10.21272/jnep.9(3).03038

Cited by 20 publications

(13 citation statements)

References 10 publications

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“…Figure 5(c) represents the effect of N A on the performance parameters. It indicates that PCE is low at low level of N A which is due to high series resistance in accordance to previous studies [64,65]. PCE of 6.92%, J sc of 15.60 mA cm −2 , V oc of 0.613 V and FF of 72.31% are obtained upon optimizing values of hole mobility (5×10 −2 cm 2 V −1 s −1 ) and doping concentration (5×10 19 cm −3 ).…”

Section: Influence Of Hole Mobility and Doping Concentration (N A ) Of Htmsupporting

confidence: 90%

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

Haider

Anwar

Wang³

2018

Semicond. Sci. Technol.

164

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Hole transport material (HTM) plays an important role in the efficiency and stability of perovskite solar cells (PSCs). Spiro-MeOTAD, the commonly used HTM, is costly and can be easily degraded by heat and moisture, thus offering hindrance to commercialize PSCs. There is dire need to find an alternate inorganic and stable HTM to exploit PSCs with their maximum capability. In this paper, a comprehensive device simulation is used to study various possible parameters that can influence the performance of perovskite solar cell with CuI as HTM. These include the effect of doping density, defect density and thickness of absorber layer, along with the influence of diffusion length of carriers as well as electron affinity of electron transport layer (ETM) and HTM on the performance of PSCs. In addition, hole mobility and doping density of HTM is also investigated. CuI is a p-type inorganic material with low cost and relatively high stability. It is found that concentration of dopant in absorber layer and HTM, the electron affinity of HTM and ETM affect the performance of solar cell minutely, while cell performance improves greatly with the reduction of defect density. Upon optimization of parameters, power conversion efficiency for this device is found to be 21.32%. The result shows that lead-based PSC with CuI as HTM is an efficient system. Enhancing the stability and reduction of defect density are critical factors for future research. These factors can be improved by better fabrication process and proper encapsulation of solar cell.

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Section: Influence Of Hole Mobility and Doping Concentration (N A ) Of Htmsupporting

confidence: 90%

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

Haider

Anwar

Wang³

2018

Semicond. Sci. Technol.

164

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“…The electron and hole capture cross section is set to 9 × 10 −15 cm 2 with the thermal velocity of both carriers fixed at 10 7 cm/s [49][50][51].…”

Section: Device Simulation Parametersmentioning

confidence: 99%

Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D

Thomas¹

2021

IJEPE

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Recently, organic-inorganic perovskite-based solar cells have become promising devices due to their unique properties in the photovoltaic field. However, the factor of toxicity, stability, high production cost and complicated fabrication processes of these devices is a challenge to their progress in commercial production. Here a numerical modelling of Caesium Tin-Germanium Tri-Iodide (CsSnGeI 3 ) as an efficient perovskite light absorber material is carried out. In this paper, different inorganic Hole Transport Materials (HTMs) such as Cu 2 O, CuI, CuSbS 2 , CuSCN and NiO have been analyzed with C 60 as the Electron Transport Material (ETM). We intend to replace the conventional hole and electron transport materials such as TiO 2 and Spiro-OMeTAD which have been known to be susceptible to light induced degradation. Moreover, the influence of the Electron Transport Layer (ETL) and the perovskite layer properties, bandgap, doping concentration and working temperature for various Hole Transport Layers (HTL) on the overall cell performance have been rigorously investigated. The design of the proposed PSC is performed utilizing SCAPS-1D simulator and for optimum device an efficiency greater than 30% was obtained. The results indicate that CsSnGeI 3 and C 60 are viable candidates for use as an absorber layer and electron transport layer in high-efficiency perovskite solar cells, with none of the drawbacks that other PSCs have.

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“…Perovskite solar cells (PSCs), which include perovskite structured compound as a light absorber layer, have quickly appeared as the most favorable photovoltaic technology. It is because of the noble electrical and physical properties of perovskite such as direct (1.5 eV) and tunable bandgap (1.2 eV to 3.17 eV), low exciton binding energy ( ̴ 20 meV) at room temperature [1][2][3], high bipolar conductivity (10 -2 -10 -3…”

Section: Introductionmentioning

confidence: 99%

Perceiving of Defect Tolerance in Perovskite Absorber Layer for Efficient Perovskite Solar Cell

et al. 2020

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Controlling the defect in the perovskite absorber layer is a very crucial issue for developing highly efficient and stable perovskite solar cells (PSCs) as it exhibits the existence of unavoidable defects even after the careful fabrication process. In this study, the presence of defects in the perovskite layer has been evaluated through the analysis of its structural and optical properties. Then the investigations on the impact of defect density on perovskite absorber layer and its associated solar cell parameters have been carried out by numerical simulation utilizing SCAPS-1D software. Besides the defect density, the thickness of the absorber layer has also been varied to find optimum values of cell parameters. It has been found that when the thickness of absorber and shallow defect density is increased from 200 nm to 800 nm and 1×10 13 cm-3 to 1×10 18 cm-3 respectively, power conversion efficiency (PCE) is varied from 26.7% to 0.90%. However, when the thickness and deep defect density are raised from 200 nm to 800 nm and 1×10 13 cm-3 to 1×10 16 cm-3 , respectively, the PCE is varied from 19.3% to 6.15%. It is revealed that optimum absorber thickness is 550 nm and the tolerances of shallow level and deep level defect density are 1×10 17 cm-3 and 1×10 15 cm-3 , respectively. INDEX TERMS Perovskite, defect tolerance, shallow level defect, deep level defect, SCAPS-1D.

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Numerical Simulation of Tin Based Perovskite Solar Cell: Effects of Absorber Parameters and Hole Transport Materials

Cited by 20 publications

References 10 publications

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D

Perceiving of Defect Tolerance in Perovskite Absorber Layer for Efficient Perovskite Solar Cell

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Numerical Simulation of Tin Based Perovskite Solar Cell: Effects of Absorber Parameters and Hole Transport Materials

Cited by 20 publications

References 10 publications

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

A comprehensive device modelling of perovskite solar cell with inorganic copper iodide as hole transport material

Numerical Analysis of CsSnGeI&lt;sub&gt;3&lt;/sub&gt; Perovskite Solar Cells Using SCAPS-1D

Perceiving of Defect Tolerance in Perovskite Absorber Layer for Efficient Perovskite Solar Cell

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Numerical Analysis of CsSnGeI<sub>3</sub> Perovskite Solar Cells Using SCAPS-1D