“…Even though the p doping of ZnO remains a huge challenge, it does not hinder ZnO from being a candidate for unipolar devices based on intersubband transitions (ISBTs), such as quantum cascade detectors (QCDs) [11,12], phononpolariton lasers [13], and quantum cascade lasers (QCLs) [14], especially in the THz range at high temperature [15]. In fact, for ISBTs below the optical phonon energy of ZnO [e.g., in the terahertz (THz) range], the population inversion of THz QCLs is significantly enhanced at high temperature due to the suppressed optical phonon emission rate, thus significantly enhancing the high temperature operation of THz QCLs [16,17]. However, to achieve that goal requires excellent growth quality of the material system, such as the accurate control of the layer thickness over the entire active region, the sharp heterointerfaces between different layers to reduce the detrimental effect of interface roughness, the constant doping level in all periods, and so on.…”