Numerical Study of Collector-Base Junction Design for Ultra-High-Speed InP/InGaAs Heterojunction Bipolar Transistors

Abstract

Eigh-frequency operation ofnon-planar and planar InP/IaGaAs EBTo with va.rious collector dophg proffles has been investigated usiug a Monte Carlo particle simulation. It is shown that vertical ecaling of collector does not provide a substantial improvement in EBT overall speed performa,uce due to the drastic increase of the collector capacitance charging time with reducirg the collector layer thickness. A considerable impmvement of rrRT high-fiequency performance has been obtaired i! EBT with buried eubcollector a.nd non-uniform collector doping proffle.