2021
DOI: 10.1016/j.ijleo.2021.168060
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Numerical study of lead free CsSn0.5Ge0.5I3 perovskite solar cell by SCAPS-1D

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Cited by 83 publications
(50 citation statements)
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“…Even though several computational analyses claimed that HPSCs using CsSnGeI 3 as the perovskite film and PCBM as the ETL performed well, experimental research shows that HPSCs using CsSn 0.5 Ge 0.5 I 3 as the absorber layer had a certified PCE of 7.1% . This shows that the results we achieved using an accurate DFT absorption spectrum for the CsSn 0.5 Ge 0.5 I 3 film are in line with the findings of the experiment outputs.…”
Section: Resultssupporting
confidence: 83%
“…Even though several computational analyses claimed that HPSCs using CsSnGeI 3 as the perovskite film and PCBM as the ETL performed well, experimental research shows that HPSCs using CsSn 0.5 Ge 0.5 I 3 as the absorber layer had a certified PCE of 7.1% . This shows that the results we achieved using an accurate DFT absorption spectrum for the CsSn 0.5 Ge 0.5 I 3 film are in line with the findings of the experiment outputs.…”
Section: Resultssupporting
confidence: 83%
“…A previous numerical study done for the device configuration FTO/PCBM/CsSn 0.5 Ge 0.5 I 3 /spiro‐OMeTAD/Au with the light absorber layer CsSn 0.5 Ge 0.5 I 3 provided a PCE of 7.1% when the organic transport layers PCBM and spiro‐OmeTAD were used in the device configuration. [ 21 ] The device configuration FTO/IGZO/Cs 4 CuSb 2 Cl 12 /CuO/Au containing the double perovskite Cs 4 CuSb 2 Cl 12 as the light‐captivating material furnishes a FF and PCE of 58.5% and 16.53%, respectively. The device configuration FTO/IGZO/Cs 3 Bi 2 I 9 /CuO/Au with the ternary perovskite material Cs 3 Bi 2 I 9 as light‐capturing layer furnishes a maximum FF and PCE of 66.13% and 9.3%, respectively.…”
Section: Resultsmentioning
confidence: 99%
“…The results are found to be consistent with the previous studies. [ 21 ] The defect density of the double perovskite Cs 4 CuSb 2 Cl 12 is altered from 1.0 × 10 11 cm −3 to 1.0 × 10 15 cm −3 . The optimum value of defect density is evaluated to be 1.0 × 10 13 cm −3 for the device design FTO/IGZO/Cs 4 CuSb 2 Cl 12 /CuO/Au.…”
Section: Resultsmentioning
confidence: 99%
“…The simulation parameters used during the analysis were adopted from the literature. 13,25,30,[34][35][36] 3 | RESULTS AND DISCUSSION…”
Section: Device Simulation and Methodologymentioning
confidence: 99%
“…In above equations, χ Perovskite and χ HTL are the electron affinity of perovskite layer and HTL, respectively, and E gPerovskite and E gHTL are band-gaps of perovskite material and HTL, respectively. 34 We analyze the optimum valence band maxima (VBM) level required for better extraction of holes at the HTL/absorber interface. During this analysis, the affinity of the ETL was kept constant while that of HTL was varied.…”
Section: Influence Of Htl and Etl Affinity On The Device Performancementioning
confidence: 99%