2022
DOI: 10.1016/j.matpr.2021.12.425
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Numerical study of Methylammonium Lead Iodide Perovskite solar cells using SCAPS-1D simulation program

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Cited by 21 publications
(17 citation statements)
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“…Furthermore, it has also been demonstrated that an increase in temperature puts the device under stress and strain, increasing defects, enhancing series resistance, and reducing shunt resistance, which causes a rapid drop in the FF. [ 40–43 ]…”
Section: Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…Furthermore, it has also been demonstrated that an increase in temperature puts the device under stress and strain, increasing defects, enhancing series resistance, and reducing shunt resistance, which causes a rapid drop in the FF. [ 40–43 ]…”
Section: Resultsmentioning
confidence: 99%
“…Furthermore, it has also been demonstrated that an increase in temperature puts the device under stress and strain, increasing defects, enhancing series resistance, and reducing shunt resistance, which causes a rapid drop in the FF. [40][41][42][43] Table 3 summarizes various parameters such as the device architecture and performance outcomes (Voc, Jsc, FF, PCE) of the current study and also the best reported values are compiled for reference.…”
Section: Effects Of Operating Temperature On Device Performancementioning
confidence: 99%
“…The minority carriers travel a longer distance to reach the FTO electrode as the ETL thickness increases and so there is a higher chance of recombination and series resistance, resulting in a decrease in FF and efficiency. [ 35,58 ] The J SC becomes saturated and independent of ETL thickness after it reaches a particular thickness. Furthermore, as the ETL thickness (travel distance) of charge carriers increases, recombination takes precedence over separation, resulting in FF and V OC losses (as shown in Figure S1a, Supporting Information).…”
Section: Resultsmentioning
confidence: 99%
“…For the device optimization, all the requisite device parameters and defect parameters for simulation work have been adopted (Tables S1–S4, Supporting Information) from existing literature for each layer as follows FTO, [ 19–22 ] GO, [ 23,24 ] Cs 2 SnI 6 , [ 25,26 ] Spiro‐OMeTAD, [ 27–30 ] CuSCN, [ 31,32 ] PTAA, [ 33,34 ] PEDOT:PSS, [ 35,36 ] NiO, [ 37,38 ] CuO, [ 39,40 ] CuI, [ 41,42 ] CuSbS 2 , [ 43–46 ] and Au (work function of 5.1 eV). [ 47 ]…”
Section: Simulation Detailsmentioning
confidence: 99%
“…In that sense, numerical simulation can be a very useful tool for studying solar cell performance. One of these tools is the SCAPS 1D software (version 3.3.09), which has been shown to be useful for investigating various solar cell parameters such as device thickness, resistance, and temperature [ 3 ], the theoretical impact of novel hole transport layers [ 4 ], and multiple terminal tandem perovskite devices [ 5 ], or even estimating the potential solar cell devices comprising chalcogenide-based perovskite active layers [ 6 ].…”
Section: Introductionmentioning
confidence: 99%