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In this paper, a novel perovskite solar cell (PSC) with a triple absorber layer is numerically simulated using Solar Cell Capacitance One-Dimensional software (SCAPS-1D). The initial simulation of the structure (FTO/TiO2/CsSnI3/CsSnGeI3/Cs3Sb2Br9/Spiro-OMeTAD/Au) reveals that by combining Cesium Tin Triiodide (CsSnI3), Cesium Tin-Germanium Triiodide (CsSnGeI3) and Cesium Antimony Bromide (Cs3Sb2Br9) as triple absorber layer, we obtain a higher efficiency {31.81%} than the single (CsSnI3), and double (CsSnI3/CsSnGeI3) layer structures, whose efficiencies are 12.87% and 29.41%, respectively. Then, to optimize the proposed structure, different parameters like; thicknesses of the triple absorber layer, different materials of ETL (electron transport layer) and HTL (hole transport layer), thicknesses of ETL & HTL, as well as the operating temperature have been investigated. The optimized structure (0.4/0.1/0.1 µm of CsSnI3/CsSnGeI3/Cs3Sb2Br9 as triple absorber layer; 0.1 µm of tungsten trioxide WO3 as ETL and 0.35 µm of Copper(I) Oxide Cu2O as HTL, as well as an optimum temperature of 300 K) shows a remarkable photovoltaic parameters i.e., JSC = 32.640774 mA/cm2, VOC = 1.2442 V, FF = 89.17% and η = 36.21% (which corresponds to an improvement of 4.4% compared to the initial proposed structure {31.81%}). This study’s simulation results open a better route toward fabricating highly efficient perovskite solar cells

It is required to simulate the performance of a photovoltaic solar cell performance to enhance it. Simulation optimization has the benefit of being inexpensive and straightforward, and it allows us to identify the optimum parameters that contribute to the enhancement of the cell. An alternative ZnSe/CdS/CIGS/Si structure has been presented using a solar cell capacitance simulator (SCAPS-1D). This paper aims to increase device efficiency by improving the physical characteristics of the many layers involved in cell realisation. We also tried to investigate the variation of electrical characteristics such as Voc, Jsc, , and FF with the changes in material parameters, notably the absorber layer thickness (CIGS, p-Si) (CIGS, p-Si). On the other hand, the temperature dependency has been simulated to guide device manufacturers to attain higher efficiency in varied temperature circumstances. The calculation result shows that excellent performance can be reached by varying the parameters, and the highest efficiency (24,94 %) of the solar cell can be reached under certain conditions, where the thicknesses of ZnSe, CdS, CIGS, and Si are 0.2m, 0.09m, 1.4m, and 0.6m respectively and for the optimal value of temperature equal to 295K.

Materials based on gallium nitride are characterized by a wide bandgap. The excellent chemical, physical and electronic properties give them a place in various fields: electronics, optoelectronics, photovoltaics, military, biological and medical. The use of biosensors based III‐N has been confirmed for the detection of biological substances in cells, blood or in solutions. This effect of detection results in various chemical and electric changes in a medium that is contacted with the devices without gate metallization of a high electron mobility transistor (HEMT). HEMT sensors can thus be used to detect gases, ions, pH values, proteins and DNA. In this work, we are interested in HEMT‐based heterostructure AlGaN/GaN used in the construction of biosensors. The principle of operation of the HEMT is based on the properties of a high‐mobility two‐dimensional gas (2DEG) and high‐speed saturation channel of a 2DEG AlGaN HEMT is very close to the surface that is very sensitive to absorption of analytes. We use this microsystem for detection of substances found in biological solutions. (© 2014 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

In this work, we have presented a solid-state dye-sensitized solar cell (SSDSSC) using X60 (full name: octakis(4-methoxyphenyl)spiro[fluorene-9,9' xanthene]-2,2',7,7'-tetraamine) as a hole transport layer (HTL). The proposed structure consists of FTO/TiO2/N719 Dye/X60/Ni. The simulation is performed using Solar Cell Capacitance One-Dimensional software. Initial results showed an efficiency η of 7.411%, a fill factor FF of 81.598%, a short-circuit current density JSC of 6.333 mA/cm2, and an open-circuit voltage VOC of 1.433 V. Afterward, various parameters, such as X60, N719, TiO2 thicknesses; X60/N719 defect; temperature; and back contact materials, were investigated to determine their effect on the suggested structure. After optimization (thicknesses: 0.4/0.4/0.9/0.3µm; defect density: 109cm-2; temperature: 285K; back contact material: Ni), an efficiency of 7.846% was achieved with a 1.443 V open-circuit voltage, 6.593 mA/cm2 short-circuit current density, and an 82.460% fill factor. Lastly, the findings reveal that employing X60 as the HTL for SSDSSC provides better performance compared to other HTLs (CuSCN, CuI, and P3HT). This study contributes to the development and production of SSDSSC.