Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

Kuo, Yen−Kuang; Chen, J.-R.; Chen, M.-L.; Liou, Bo Ting

doi:10.1007/s00340-006-2567-5

Cited by 3 publications

(2 citation statements)

References 32 publications

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“…Nowadays, VCSELs emitting at various wavelengths are widely studied and some of them, such as 980 nm, 850 nm, and 780 nm devices, even are commercialized. [15][16][17][18] VCSEL with an operating wavelength of 850 nm has aroused the great interest in short-haul optical communication. Due to optical and electric confinement of the oxidation layer, VCSEL devices can achieve only a low threshold singlemode laser output.…”

Section: Introductionmentioning

confidence: 99%

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Liao

et al. 2020

Chinese Phys. B

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The influence of oxidation aperture on the output characteristics of the circularly symmetric vertical-cavity-surface-emitting laser (VCSEL) structure is investigated. To do so, VCSELs with different oxide aperture sizes are simulated by the finite-difference time-domain (FDTD) method. The relationships among the field distribution of mode superposition, mode wavelength, output spectra, and far-field divergence with different oxide apertures are obtained. Further, VCSELs respectively with oxide aperture sizes of 2.7 μm, 4.4 μm, 5.9 μm, 7 μm, 8 μm, 9 μm, and 18.7 μm are fabricated and characterized. The maximum output power increases from 2.4 mW to 5.7 mW with oxide aperture increasing from 5.9 μm to 9 μm. Meanwhile, the wavelength tuning rate decreases from 0.93 nm/mA to 0.375 nm/mA when the oxide aperture increases from 2.7 μm to 9 μm. The thermal resistance decreases from 2.815 °C/mW to 1.015 °C/mW when the oxide aperture increases from 4.4 μm to 18.7 μm. It is demonstrated theoretically and experimentally that the wavelength spacing between adjacent modes increases with the augment of the injection current and the spacing becomes smaller with the oxide aperture increasing. Thus it can be reported that the aperture size can effectively reduce the mode overlaying but at the cost of the power decreasing and the wavelength tuning rate and thermal resistance increasing.

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Section: Introductionmentioning

confidence: 99%

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Liao

et al. 2020

Chinese Phys. B

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“…These advantages, together with its high-speed modulation, have made it widespread application in short-distance parallel fiber-optic interconnects and highpower laser source [4][5][6]. VCSELs emitting at many different wavelengths have been extensively studied and some 980, 850, and 780 nm devices have been commercialized into various lightwave systems [7][8][9]. Meanwhile, blue-ultra-violet GaN, red AlGaInP, and 1300-1550 nm long-wavelength devices are now being developed and have achieved a considerable performance [8,10,11].…”

Section: Introductionmentioning

confidence: 99%

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

Zhang

et al. 2011

Opt. Express

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Vertical-cavity surface-emitting lasers emitting at 808 nm with unstrained GaAs/Al0.3Ga0.7As, tensilely strained GaAs(x)P(1-x)/Al0.3Ga0.7As and compressively strained In(1-x-y)Ga(x)Al(y)As/Al0.3Ga0.7As quantum-well active regions have been investigated. A comprehensive model is presented to determine the composition and width of these quantum wells. The numerical simulation shows that the gain peak wavelength is near 800 nm at room temperature for GaAs well with width of 4 nm, GaAs0.87P0.13 well with width of 13 nm and In0.14Ga0.74Al0.12As well with width of 6 nm. Furthermore, the output characteristics of the three designed quantum-well VCSELs are studied and compared. The results indicate that In0.14Ga0.74Al0.12As is the most appropriate candidate for the quantum well of 808-nm VCSELs.

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Design of High-Power Red VCSEL on a Removable Substrate

Peng

Huang

et al. 2022

Photonics

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In this work, the architecture of a high-power InAlGaP/InGaP vertical-cavity surface-emitting laser (VCSEL) with an emission wavelength of 680 nm was studied. The design of quantum well, including the well thickness, indium composition, and barrier aluminum composition targeting the emission wavelength, was elaborately optimized. Moreover, the influences of leakage current, temperature dependence of optical gain, and resonance mode gain to threshold current under different barrier aluminum compositions were investigated. Lastly, the temperature characteristics of InAlGaP/InGaP VCSEL with substrate removal have also been calculated with 24% and 40.6% improvement in thermal resistance and operating current range, respectively. It holds great promise for high-power red VCSEL application.

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Numerical study on strained InGaAsP/InGaP quantum wells for 850-nm vertical-cavity surface-emitting lasers

Cited by 3 publications

References 32 publications

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Oxide-aperture-dependent output characteristics of circularly symmetric VCSEL structure

Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs

Design of High-Power Red VCSEL on a Removable Substrate

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