2019
DOI: 10.3390/app9030385
|View full text |Cite
|
Sign up to set email alerts
|

O-Band and C/L-Band III-V Quantum Dot Lasers Monolithically Grown on Ge and Si Substrate

Abstract: Direct epitaxial growth of III-V heterostructure on CMOS-compatible silicon wafer offers substantial manufacturing cost and scalability advantages. Quantum dot (QD) devices are less sensitive to defect and temperature, which makes epitaxially grown III-V QD lasers on Si one of the most promising technologies for achieving low-cost, scalable integration with silicon photonics. The major challenges are that heteroepitaxial growth of III-V materials on Si normally encounters high densities of mismatch dislocation… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4

Citation Types

0
14
0

Year Published

2019
2019
2023
2023

Publication Types

Select...
7
2
1

Relationship

3
7

Authors

Journals

citations
Cited by 28 publications
(14 citation statements)
references
References 72 publications
0
14
0
Order By: Relevance
“…As monolithic integration of III-V laser and silicon photonic components has always been a much-desired functionality, direct epitaxial growth of III-V quantum-dot (QD) lasers on silicon substrate has been extensively investigated with dramatic progress recent years 13 20 . Benefiting from the technical development of high-quality III-V material growth on silicon 21 25 , various silicon-based laser structures have been demonstrated with outstanding performance, including distributed feedback (DFB) lasers 26 29 , microcavity lasers 30 32 and mode-locked lasers 33 36 . From silicon photonic integration perspectives, all active and passive silicon photonic components should be on the same SOI platform, therefore, there is a strong urge to develop an SOI-based monolithic laser integration solution to efficiently couple the light into silicon waveguides (WGs).…”
Section: Introductionmentioning
confidence: 99%
“…As monolithic integration of III-V laser and silicon photonic components has always been a much-desired functionality, direct epitaxial growth of III-V quantum-dot (QD) lasers on silicon substrate has been extensively investigated with dramatic progress recent years 13 20 . Benefiting from the technical development of high-quality III-V material growth on silicon 21 25 , various silicon-based laser structures have been demonstrated with outstanding performance, including distributed feedback (DFB) lasers 26 29 , microcavity lasers 30 32 and mode-locked lasers 33 36 . From silicon photonic integration perspectives, all active and passive silicon photonic components should be on the same SOI platform, therefore, there is a strong urge to develop an SOI-based monolithic laser integration solution to efficiently couple the light into silicon waveguides (WGs).…”
Section: Introductionmentioning
confidence: 99%
“…The Si-based optoelectronic integration chip (OEIC) plays a promising role in cloud-based applications and data centers due to its potential prospects for integrating photonic devices with the mature CMOS technology [ 1 , 2 , 3 , 4 , 5 ]. The OEIC systems mainly consist of numerous independent devices, such as: lasers [ 6 , 7 ], modulators [ 8 , 9 ], detectors [ 10 , 11 ], and waveguides [ 12 ], etc.…”
Section: Introductionmentioning
confidence: 99%
“…A photonic integrated circuit (PIC) on silicon is one of the most promising platforms for highdensity photonic integration (Dai et al, 2012;Komljenovic et al, 2018;Huang et al, 2020). Over the past decade, many methodologies have been implemented to integrate III-V materials onto silicon substrates, which take advantage of III-V materials as active devices, such as lasers and photodetectors (Zhang et al, 2019a;Feng et al, 2019;Malik et al, 2020;Grillot et al, 2020;Zhang et al, 2020;Wei et al, 2019;Wei et al, 2020a). But a major challenge impeding heterogeneous integration is the external optical feedback (EOF) induced between a laser and other photonic components or fiber connectors, which can lead the laser to operate in a chaotic state.…”
Section: Introductionmentioning
confidence: 99%