O-band DFB laser heterogeneously integrated on a bulk-silicon platform

Shin, Dongjae; Cha, Junghwa; Kim, Sunggu; Shin, Yong-hwack; Cho, Kwansik; Ha, K. H.; Jeong, Gitae; Hong, Hyeongsun; Lee, Kyu Pil; Kang, Ho-Kyu

doi:10.1364/oe.26.014768

Cited by 23 publications

(12 citation statements)

References 20 publications

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“…In most PICs, top device priorities are usually on lasers or amplifiers. The Si thickness of the III/V-on-BS platform in Samsung has been 350 nm through design-process-test iterations [33].…”

Section: Iii/v-on-bs Platformmentioning

confidence: 99%

“…The pattern-dependent yield instability may imply that the flatness of the patterned silicon prior to the SPE process affects the bonding yield. Further process details can be found in the previous reports [33], [34], [37].…”

Section: B Process Of Iii/v-on-bs Platformmentioning

confidence: 99%

“…The III/V-on-Si PD is a reverse-biased optical amplifier with optimized length and width of the Si WG, and it features responsivity of 0.75 A/W and dark current of 150 nA at bias voltage of -1 V. Further analysis on the modulation bandwidth remains. Details of the III/V-on-BS devices can be found in the previous reports [33], [34]. The last missing key device for the library is the optical isolator, which allows the optical transmission in only one direction and prevents unwanted optical reflections [35].…”

Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 99%

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Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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The CMOS industry has been expecting silicon photonics to provide photonic and electro-photonic integrated circuits based on the CMOS processes and infrastructures for scalability of incumbent technology evolutions and creation of novel technologies. However, the compatibility with the legacy CMOS has been compromised with the development convenience of early silicon photonics in that the specialty silicon-on-insulator substrates have been widely used as integration platforms. Since this specialty substrate may hinder the photonics integration with legacy volume products later, a legacy-friendly integration platform with a generic bulk-silicon substrate has been developed for better compatibility. This paper overviews the bulk-silicon photonics platform born for DRAM integration, upgraded with III/V-on-bulk-Si lasers, and transplanted to LiDAR applications requiring the virtuous cycle of cost and volume. The photonics integration with DRAM was to resolve the speed-capacity tradeoff in the DRAM interconnects, and technical feasibility as well as lessons learned from the integration attempt are reviewed. The bulk-silicon device performance approaches that of silicon-oninsulator devices with the thermal advantage of ~40-% lower thermal impedance and the optical disadvantage of ~0.4-dB/mm higher waveguide loss. In the LiDAR applications, detection performance up to ~20 m at 20 fps by a single-chip scanner integrating tunable laser, semiconductor optical amplifiers, and optical phased array are presented with future outlooks.

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Section: Iii/v-on-bs Platformmentioning

confidence: 99%

Section: B Process Of Iii/v-on-bs Platformmentioning

confidence: 99%

Section: Performance Of Iii/v-on-bs Platformmentioning

confidence: 99%

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Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Shin

Byun

Shim

et al. 2022

J. Lightwave Technol.

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“…Grating couplers can be used as in-and out-coupling interfaces, whereat the input interface can be substituted in future by a hybrid integrated laser source, following the principles outlined, e.g., in Refs. [25][26][27]. For polarization-multiplexed systems, 2D GCs are necessary as an output.…”

Section: Conceptmentioning

confidence: 99%

Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line

Georgieva

Mai

Seiler

et al. 2022

Front. Optoelectron.

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In this paper, we report on polarization combining two-dimensional grating couplers (2D GCs) on amorphous Si:H, fabricated in the backend of line of a photonic BiCMOS platform. The 2D GCs can be used as an interface of a hybrid silicon photonic coherent transmitter, which can be implemented on bulk Si wafers. The fabricated 2D GCs operate in the telecom C-band and show an experimental coupling efficiency of − 5 dB with a wafer variation of ± 1.2 dB. Possibilities for efficiency enhancement and improved performance stability in future design generations are outlined and extension toward O-band devices is also investigated. Graphical Abstract

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“…Back reflections are generally undesirable in optical communication systems and particularly problematic when they return to the emitting laser, due to resulting instabilities and laser emission coherence loss. While in some SiP transceiver solutions the laser is mounted in a micro-package already provided with optical isolation, 15,16 heterogeneous integration of lasers inside an SiP chip 17,18 in particular calls for an isolator at the output of the transmitter. Optical isolators typically make use of non-reciprocal Faraday rotators together with polarization selective elements such as birefringent materials.…”

Section: Polarization Splitting Interposer Configurations With Integr...mentioning

confidence: 99%

Glass-molded optical interposers for wafer scale photonic integrated circuit packaging in 800G modules and co-packaged optics

Ackermann

Shen

Merget

et al. 2022

Optical Interconnects XXII

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We report on glass-molded micro-optical interposers for single-mode fiber-to-PIC coupling fabricated in parallel by isothermal molding of 1-inch glass plates yielding over 100 arrays of 8 lenses each. Excess losses between PIC and singlemode fiber are below 1 dB. In addition to allowing a narrow package footprint, beam transformation maps mode profiles between fibers and surface couplers, and, in case of grating couplers, can adapt the light incidence angle on a wavelengthspecific basis, facilitating packaging of PICs in CWDM and LAN-WDM modules. The interposers can be further extended to support polarization management and isolation by coating with polarization selective thin film stacks in MacNeille configuration, as well as wavelength multiplexing by coating with dichroic stacks. Using this technique, over 256 bidirectional transceiver channels can be packaged in the footprint of a single reticle.

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O-band DFB laser heterogeneously integrated on a bulk-silicon platform

Cited by 23 publications

References 20 publications

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Bulk-Si Platform: Born for DRAM, Upgraded With On-Chip Lasers, and Transplanted to LiDAR

Dual-polarization multiplexing amorphous Si:H grating couplers for silicon photonic transmitters in the photonic BiCMOS backend of line

Glass-molded optical interposers for wafer scale photonic integrated circuit packaging in 800G modules and co-packaged optics

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