Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

Huang, Cong; Li, D. Z.; Cheng, Bingying; Yu, Jinzhong; Wang, Q. M.

doi:10.1063/1.1322372

Cited by 10 publications

(5 citation statements)

References 9 publications

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“…This vertical alignment of the islands during the growth of successive layers has been reported several times [29], and it is probably due to the formation of a region of tensile stress above an island, which favors the positioning of islands on top of it, leading to column stacking of islands.…”

Section: Semiconductor Elementary Surface Processes and New Device Famentioning

confidence: 99%

Atomic description of elementary surface processes: diffusion and dynamics

Rosei

2002

Surface Science

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Section: Semiconductor Elementary Surface Processes and New Device Famentioning

confidence: 99%

Atomic description of elementary surface processes: diffusion and dynamics

Rosei

2002

Surface Science

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“…The QDs obtained in posterior layers presented irregular heterozygous forms of vertical correlation, oblique correlated and vertical anti-correlation. It was possible that the density of QDs in the initial layers was low resulted in elastic interaction between the QDs in the same layer were weaker than the anisotropic elastic interaction between the surface QDs and the buried QDs, the QDs were vertically correlated [20,21]. While in the posterior layers, the obvious change of size and density of QDs enhanced the elastic interaction energy between the QDs in the same layer, and the change of total energy of the system driven the volume and interval of QDs to be adjusted constantly, which made the corresponding QDs exhibit a variety of arrangements.…”

Section: (C))mentioning

confidence: 99%

Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering

Shu

Huang

Zhang

et al. 2023

Micro & Nano Letters

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We prepared multilayered Si-based Ge quantum dots (Ge/Si QDs) by using magnetron sputtering technique and reported the corresponding morphology evolution. The increased temperature can improve the Si-isolated-layer crystallinity and Ge atom mobility to increase the density, size and spatial distribution uniformity of top-layer QDs. The morphology and vertical correlation between layers of QDs at different temperatures exhibited different phenomena or laws, and had been explained in this work, which made it possible to control the quality of multilayer QDs more effectively in the high-rate growth, and laid a foundation for the industrial production of active layers of optoelectronic devices.

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“…[1][2][3][4][5][6][7][8] ). Multi-layered structures, known as superlattices, are seen to organize so that the Quantum Dots (QDs) on successive layers nucleate and grow above the buried QDs 5 . The self-assembly occurs such that the QDs in the later layers deviate from being centered on the lower QDs to positions that more evenly space the quantum dots.…”

Section: Introductionmentioning

confidence: 99%

Analysis of the Three-Dimensional Nanoscale Relationship of Ge Quantum Dots in a Si Matrix Using Focused Ion Beam Tomography.

et al. 2004

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It is well documented that buried layers in quantum dot (QD) superlattices influence the position of quantum dots in the subsequently grown layers through strain field interactions (e.g.1,2, 3,4). Using the Focused Ion Beam (FIB) tomographic technique we have reconstructed the 3D relationship of successive layers of coherent Ge QDs separated by epitaxial Si capping layers - a “QD superlattice”.Techniques such as Atomic Force Microscopy (AFM) and Scanning Tunneling Microscopy (STM) can only look at a single surface layer of QDs or, in the case of Transmission Electron Microscopy (TEM), look at a two-dimensional projection of a three-dimensional volume so that 3D relationships need to be inferred. Since the strain interactions are complex, an enhanced fundamental understanding of these self-organization mechanisms can more directly be obtained from full 3D reconstructions of these structures.By capping with Si at 300°C we were able to grow QD superlattices with QDs tens of nanometers in height. This places them within the resolution of the FIB tomographic technique to reconstruct. Using the FIB we performed in-situ serial sectioning of the QD superlattice and then reconstructed the QD superlattice. The reconstruction was then analyzed to investigate the ordering of the QDs.Results from a reconstruction of a superlattice matrix will be presented with analysis of the self-ordering of the QDs. Observations of a novel self-limiting (in height) morphology, the quantum mesa, associated with the capping technique used will also be discussed.

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Oblique alignment of columns of self-organized Ge/Si(001) islands in multilayer structure

Cited by 10 publications

References 9 publications

Atomic description of elementary surface processes: diffusion and dynamics

Atomic description of elementary surface processes: diffusion and dynamics

Morphology and structure evolution of multilayered Ge/Si quantum dots grown by magnetron sputtering

Analysis of the Three-Dimensional Nanoscale Relationship of Ge Quantum Dots in a Si Matrix Using Focused Ion Beam Tomography.

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