Observation and origin of the photoluminescence spectrum showing multi-band structure from strained layer superlattice of ZnS–ZnTe

Lu, Yanwu; Matsumoto-Aoki, Tamao; Sakamoto, Y; Iida, S.

doi:10.1016/s0022-0248(00)00078-6

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“…In addition, its peak energy is lower than that of ZnS 0:78 Te 0:22 epilayer being 2.202 eV. The band lineup of ZnS/ZnTe heterostructure is known to be type-II band alignment, consisting of electron wells in the ZnS layers and hole wells in the ZnTe layers [9]. Therefore, it is expected that the band alignment of ZnS 0:78 Te 0:22 /ZnTe structure is not different from that of ZnS/ZnTe heterostructure.…”

Section: Article In Pressmentioning

confidence: 99%

“…Therefore, in view of band gap engineering, their quantum structures and alloys are of great interest in the area of short-wavelength optoelectronic devices [9]. Anion-mixed ternary semiconductor, ZnS 1Àx Te x has advantages such that direct band gap can be tuned from 2.0 to 3.7 eV at room temperature by varying the Te composition, covering the ultraviolet-visible region and it shows strong luminescence intensity even at room temperature [10].…”

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confidence: 99%

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