“…In order to address these aforementioned issues related to ZnO, researchers have developed several strategies, including the passivation and chemical doping of the ZnO-based ETL, interfacial modification, device engineering, and ligand modification of QDs. 15–20 Among these strategies, interfacial modification is one of the most cost-effective methods and widely employed in optoelectronic devices, such as organic light-emitting diodes (OLEDs), organic solar cells (OSCs), perovskite light emitting diodes (PeLEDs), and perovskite solar cells (PSCs). 9,21–24 For example, Tang et al modified the interface between the perovskite EML and the ZnMgO ETL with the amino-based compound, which not only interacted with ZnMgO and thereby modified the growth of perovskite film, but also passivated the perovskite defects.…”