Observation of a domain drag effect in amorphous GdCoMo films

DeLuca, J. C.; Gambino, R. J.; Malozemoff, A. P.

doi:10.1109/tmag.1978.1059910

Cited by 19 publications

(3 citation statements)

References 8 publications

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“…This force is due to the magnetic field generated by the zig-zagging current acting back on the domain structure. This effect has been observed in magneto-optic studies of perpendicularly magnetized current carrying wires [22].…”

Section: Hall Effectmentioning

confidence: 53%

Domain wall resistivity in epitaxial thin film microstructures

Kent

Rüdiger

et al. 2001

J. Phys.: Condens. Matter

134

112

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This article reviews our recent experimental studies of domain wall (DW) resistivity in epitaxial transition metal ferromagnetic thin film microstructures with stripe domains. The results are presented and analysed in the context of models of DW scattering and conventional magnetoresistance (MR) effects in ferromagnetic metals. Microstructures of progressively higher magnetic anisotropy and thus smaller DW widths have been studied, including; bcc Fe, hcp Co and L1 • FePt. The magnetic domain structure of these materials have been investigated using magnetic force microscopy and micromagnetic simulations. In Fe and Co the dominant sources of low-field MR are ferromagnetic resistivity anisotropy, due to both anisotropic MR (AMR) and the Lorentz MR. In Fe, at low temperature, a novel negative DW contribution to the MR has been found. Hcp Co microstructures show a greater resistivity for current perpendicular to DWs than for current parallel to DWs, that is consistent with a small (positive) DW resistivity and a Hall effect mechanism. High anisotropy L1 • FePt microstructures show strong evidence for an intrinsic DW contribution to the resistivity. Related studies and future directions are also discussed.

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Section: Hall Effectmentioning

confidence: 53%

Domain wall resistivity in epitaxial thin film microstructures

Kent

Rüdiger

et al. 2001

J. Phys.: Condens. Matter

134

112

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“…The recently proposed VCR-voltage controlled rotation [2] is very appealing, but the fabrication requirements appear to be quite stringent. In this paper, we are interested in exploiting the well-known phenomena of domain drag induced by current pulses and applying the technique to small patterned structures similar to studies of patterned GdCoMo films [3]. The devices that could potentially benefit from these investigations are magnetic tunnel junctions [4], as well as MRAM's and spin transistors that utilize Permalloy as a spin sensing electrode.…”

Section: Introductionmentioning

confidence: 99%

Pulsed-current-induced domain wall propagation in Permalloy patterns observed using magnetic force microscope

et al. 2000

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Abstract-Pulsed-current controlled wall motion in 20 m wide 200 m long 160 nm thick patterned Permalloy strips was studied using magnetic force microscopy. By sequential imaging, the displacement of Bloch walls as far as 200 m along the strip was observed. The direction of motion was in the same direction as the carrier velocity, which reversed with current polarity. The displacement per pulse was dependent upon the sample thickness and current density, which suggests that the mechanism is a combination of s-d exchange and hydromagnetic domain drag forces.

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“…domain drag effect. 16 Such current-induced domain wall motion has been clearly visualized by magnetic force microscopy in metallic systems 17 and by magneto-optic imaging in ferromagnetic semiconductors. 7 It is worth noting that for the semiconductor case the domain wall motion can be driven by a current density of 10 5 A/cm 2 , 6 which is two to three orders of magnitude smaller than that required in metals.…”

mentioning

confidence: 99%

Propagation dynamics of individual domain walls inGa1−xMnxAsmicrodevices

et al. 2006

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We investigated the transport dynamics of individual magnetic domain walls by employing electrical measurements in multiterminal Ga 1−x Mn x As microdevices. Domain wall propagation velocities were deduced from time-of-flight planar Hall measurements between multiple electrical probes of our samples. Domain wall motion induced by both magnetic field and electric currents was systematically investigated. Dependent on the strength of applied in-plane magnetic field, two regimes of domain wall motion, involving thermally assisted flow for low fields and viscous flow for high fields, have been identified. However our data shows no evidence of spin-current induced domain wall motion.

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Observation of a domain drag effect in amorphous GdCoMo films

Cited by 19 publications

References 8 publications

Domain wall resistivity in epitaxial thin film microstructures

Domain wall resistivity in epitaxial thin film microstructures

Pulsed-current-induced domain wall propagation in Permalloy patterns observed using magnetic force microscope

Propagation dynamics of individual domain walls inGa1−xMnxAsmicrodevices

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