Observation of a growth instability during low temperature molecular beam epitaxy

Nucleation, Growth, and Relaxation of Thin Films: Metal(100) Homoepitaxial Systems

“…60 We have also shown that for a rough film at 20 monolayers, where the split diffraction profile is lost at the out-of phase condition, if one reduces q z toward the in phase condition, then splitting is recovered. 79 This feature is expected from the theory 60,61 which shows that the profile shape is controlled by the combination q z W, as has been discussed by Yang et al 80 Finally, we note that analogous kinetic roughening, mound coarsening, and associated diffraction profile evolution, has been observed in Fe/Fe(100) 81 and Cu/Cu(100) 82,83 homoepitaxy.…”

Temperature-dependent vacancy formation during the growth of Cu on Cu(001)

“…Recently, it was found that certain metallic surfaces, where homoepitaxy is dominated by an additional energy barrier that opposes the interlayer mass transport ͓Ehrlich-Schwoebel ͑ES͒ effect͔, 11 exhibit a strong temperature dependence of growth within the low-T regime. For example, He-atom scattering measurements of Cu/Cu͑001͒ epitaxy 12 have revealed a ''reentrant smooth growth'' below T ϭ160 K. Similar observations were made in a recent scanning tunneling microscopy ͑STM͒ study of Ag/Ag͑001͒ where the roughness of 25-ML-thick films was observed to decrease upon cooling between 200 and 130 K, and then increase when the growth temperature was further reduced to 50 K. 5 This behavior, as well as other temperature-dependent effects observed during low-T homoepitaxial growth, 7 has been explained in terms of competing uphill and downhill surface currents. 13,14 Specific mechanisms have been proposed, such as ''transient mobility, '' 7 ''downward funneling, '' 15 or ''restricted downward funneling,'' 5 and much progress has been achieved in the understanding of low-T homoepitaxial growth.…”

An interdisciplinary approach to the electrochemistry at solid electrodes

“…Pro cesses such as the for ma tion of a solid phase by ei ther va por phase de po si tion 7 , epitaxial growth in duced by mo lec ular rays 8 , or the growth of metal electrodeposits 9 , and the disso lu tion of a solid phase as it oc curs in cor ro sion in gen eral 10 , in volve an in ter face mo tion. The way in which the in ter face dis place ment oc curs re flects the type of ki net ics obeyed by the sys tem and the dom i nant mech a nism op er at ing in the pro cess.…”