Observation of a new Al(111)/Si(111) orientational epitaxy

Yapsir, A. S.; Choi, Chang-Ho; Lu, Toh‐Ming

doi:10.1063/1.345734

Cited by 39 publications

(16 citation statements)

References 7 publications

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“…The interfacial energy was reported to vary nonmonotonically with misorientation angle θ for Au, Cu, and Al films on (111) Si [20][21][22][23]. Those results confirm that there are special configurations of interfaces with relatively high planar coincident site densities.…”

Section: Single-phase Nanostructuressupporting

confidence: 84%

Thin-film nanostructures: Substructural aspects

Иевлев

2004

Inorg Mater

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A classification of thin-film nanostructures grown by vacuum deposition processes is presented. Particular attention is given to the formation of multioriented epitaxial nanostructures. Multioriented epitaxial growth is shown to depend on the interfacial energy. The size effect in the growth of oriented nanostructures is discussed. The possibility of grain refining in fcc/bcc and hcp/bcc metallic multilayers is examined. The interrelated issues pertaining to the formation of multilayer heterostructures are systematized. S72

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Section: Single-phase Nanostructuressupporting

confidence: 84%

Thin-film nanostructures: Substructural aspects

Иевлев

2004

Inorg Mater

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“…A GSAM model was applied to the germanium/sapphire interface to evaluate the epitaxial relationship between the two materials. It has been shown that the GSAM model can predict and match well for many heterostructure interfaces. ,− As mentioned in the previous study, the model evaluates the superlattice formed by the two crystalline materials on their interfaces regarding the superlattice area and area mismatch. It searches for the minimum superlattice area and minimum area mismatch between the two materials using the geometry of each unit mesh at the interface.…”

Section: Resultsmentioning

confidence: 99%

Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering

Wen

Washington

et al. 2020

ACS Appl. Electron. Mater.

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As an excellent semiconductor material with low band gap and high carrier mobility, germanium is widely used in the semiconductor industry in photoelectronic devices, high-frequency radio frequency (rf) circuits and devices, etc. Compared to bulk germanium wafer and silicon-based germanium on insulator (GOI) materials, the germanium on sapphire (GOS) substrate offers a highly cost-effective solution with several important advantages, including low thermal expansion coefficient mismatch, high insulator resistivity, lower rf losses, and superior crosstalk suppression. In this work, we present a method to grow a high-quality thin germanium epitaxial film on a sapphire (0001) substrate using direct-current (DC) sputtering at an elevated temperature of 600 °C. We demonstrate that thermal annealing at 850 °C reduced the germanium (111) twinning, increased the size of crystalline domains in the germanium film and thus further improved the crystalline quality. For a film with a thickness of 500 nm, the hole Hall mobility increased to 440 cm2/V·s after thermal annealing, which is about 10 times more than that of the as-sputtered film. For a 2.0 μm film, the hole Hall mobility increased to 824 cm2/V·s, which has not been reported in the literature for a GOS film. This method offers a simple but efficient way to fabricate a GOS substrate for optical electronic device applications.

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“…They are Among the three relationships, ͑1͒ was most commonly observed due to it having the lowest strain energy. Based on the in-plane orientation determined by maximizing the number of coincidence sites at the interface between TiSi 2 and the silicon substrate, the areal mismatch ͑⌬A͒ is defined by ⌬A = A͓͑⌬a / a͒ + ͑⌬b / b͒ + ͑⌬␣ cot ␣͔͒, 40 where a and b are the edges of the superlattice, ␣ is the angle between the edges of the superlattice a and b, A is equal to ab sin ␣, and ⌬a, ⌬b, and ⌬␣ are the mismatch of a, b, and ␣, respectively. The areal mismatch between silicon and the C49 polymorph of TiSi 2 based on the above expression is 1.65, 5.69, and 3.12 Å 2 , for the orientation relationships ͑1͒-͑3͒, respectively.…”

Section: Resultsmentioning

confidence: 99%

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

He¹,

Jia

Vaithyanathan

et al. 2005

Journal of Applied Physics

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The SrTiO 3 / Si interface was investigated by transmission electron microscopy for SrTiO 3 films grown on ͑001͒ Si by molecular-beam epitaxy with different native oxide ͑SiO 2 ͒ removal treatments, and Sr/ Ti flux ratios. The interface and film microstructure were independent of the process used to remove the native oxide, but the interface reactivity was dependent on the Sr/ Ti flux ratio. A low Sr/ Ti flux ratio ͑ϳ0.8͒ resulted not only in a layer of amorphous material at the film/substrate interface but also in the formation of crystalline C49 TiSi 2 precipitates at that interface. These results are consistent with thermodynamic expectations in which it is paramount to maintain separation between TiO 2 and the underlying silicon.

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Observation of a new Al(111)/Si(111) orientational epitaxy

Abstract: A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.

Cited by 39 publications

References 7 publications

Thin-film nanostructures: Substructural aspects

Thin-film nanostructures: Substructural aspects

Heteroepitaxy of High-Mobility Germanium on Sapphire (0001) with Magnetron Sputtering

Interfacial reaction in the growth of epitaxial SrTiO3 thin films on (001) Si substrates

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