Articles you may be interested inThermal anneal activation of near-surface deep level defects in electron cyclotron resonance hydrogen plasmaexposed silicon J. Vac. Sci. Technol. B 15, 226 (1997); 10.1116/1.589269 Damage and contamination in lowtemperature electron cyclotron resonance plasma etching Damage formed by electron cyclotron resonance plasma etching on a gallium arsenide surface Damage and contamination produced after electron cyclotron resonance (ECR) etching of Si using CF 4 gas has been studied using electrical characterization, Rutherford backscattering spectroscopy (RBS), secondary ion mass spectroscopy (SIMS), scanning electron microscopy (SEM), transmission electron microscopy (TEM), and etch pit density measurement techniques. Due to the sman dc self-bias voltage generated across the pla..<;ma sheath, ECR etching is expected to produce low damage and contamination levels. RBS measurements show that ECR etching does indeed produce less structural damage than that produced by conventional reactive ion etching (RIE). It is found that the damage and contamination levels from an ECR etching process are actually reduced by the addition of radio frequency (rO power to the wafer. The metallic impurity levels are shown to be greatly reduced by covering the stainless steel wall of the ECR source near the resonance region with an anodized Al liner. The plasma density in the resonance region of the reactor during ECR processes is much higher than that during RIE processes. Therefore, the ECR processes produce heavy metal contamination, which is mainly from the portion of the stainless steel wall of the reactor in contact with the plasma. Schottky diodes fabricated on the etched samples exhibit high leakage currents implying some damage and/or impurities are present in the near-surface region. Relationships that exist among the generation current of the metal-oxide-silicon (MOS) capacitors, the etch pit density and the metallic impurity level were studied. Some wafers were exposed to an Ar ECR/RIE plasma to compare the effects of pure physical sputtering and ion-assisted chemical etching, as when CF" was used. A possible explanation for the observed behavior is given.

A new Al(111)/Si(111) orientational epitaxy using x-ray pole figure analysis is reported. The new structure has a 19° rotation with respect to the parallel epitaxy. The results are explained using a geometrical lattice matching concept.

We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was applied to the substrate during deposition. X-ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al〈1̄10〉∥Si〈1̄10〉 orientation, was preferentially grown on the Si substrate.

Surface modifications of silicon induced by electron cyclotron resonance (ECR) etching with CF4 is studied using x-ray photoemission spectroscopy and Raman scattering techniques. It is shown that a silicon sample etched by ECR exhibits a thinner surface residual layer compared to those exposed to reactive ion etching (RIE) or hybrid ECR/RIE. Evidence of plasma-induced structural disorder in the silicon surface was only observed in the RIE-etched sample.

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