X-ray photoemission and Raman scattering spectroscopic study of surface modifications of silicon induced by electron cyclotron resonance etching

Yapsir, A. S.; Oehrlein, G. S.; Fortuño‐Wiltshire, G.; Tsang, J. C.

doi:10.1063/1.103607

Cited by 6 publications

(6 citation statements)

References 11 publications

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“…The presence of residue layers as well as the nature of their bonding has also recently been established for CC12F2 MRIE of silicon (11), as well as for CF4ECR etching of silicon (13,14). The latter work also compared the residues present in CF4ECR etching of Si with those present if RIE is used or if a hybrid RF-biased ECR (hybrid ECR/RIE) is used.…”

Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%

“…The principal techniques that have been used to establish the presence and chemical makeup of these different kinds of residue layers are x-ray photoelectron spectroscopy (XPS), secondary ion mass spectroscopy (SIMS), and Auger electron spectroscopy (AES) (14,16,29,31); in addition, electrical measurements have been used to infer the presence of residue layers since these layers, when sufficiently thick, can cause series resistance in Schottky barrier and ohmic contacts (4). Ellipsometry has also proven to be useful in determining the presence of residue layers (34)(35)(36).…”

Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%

“…Impurity contamination and permeation--the effect, its detection, and repercussions.--Impurities, particularly metallic impurities such as Fe, Ni, A1, Na, Cr, K, and Zn, have been detected by a number of groups (2,3,13,14,19,28) on the surface, and in the near-surface region, of materials exposed to dry etching techniques as varied as PE, RIE, ECR, and MRIE. These impurities are believed to arise from dry etching processing chambers and their fixturing.…”

Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%

“…Dry etching techniques such as reactive ion etching (RIE), magnetron reactive ion etching (MRIE), plasma etching (PE), ion beam etching (IBE), electron cyclotron resonance (ECR) etching, and reactive ion beam etching (RIBE) can cause damage and contamination effects in exposed materials (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14). In fact, damage is often inherent in these processes due to the presence of ion bombardment, which can create bonding damage in semiconductors and insulators (1-9, 11, 13), as well as due to the presence of UV radiation, which can create bonding damage in insulators (10).…”

mentioning

confidence: 99%

“…In fact, damage is often inherent in these processes due to the presence of ion bombardment, which can create bonding damage in semiconductors and insulators (1-9, 11, 13), as well as due to the presence of UV radiation, which can create bonding damage in insulators (10). Contamination is also often inherent in these processes due to the presence of residue layers made up of reactant species and reaction products and due to the presence of impurities which may permeate the etched material during the dry etching exposure (3,4,(11)(12)(13)(14)(15)(16)(17)(18)(19)(20)(21)(22). These damage and contamination effects that can be inherent in dry etching are shown schematically in the model of Fig.…”

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confidence: 99%

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An Overview of Dry Etching Damage and Contamination Effects

Fonash

1990

J. Electrochem. Soc.

146

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Plasma or dry etching techniques, such as reactive ion etching, magnetron reactive ion etching, electron cyclotron resonance etching, ion beam etching, and plasma etching, can result in damage and contamination of the materials used in device structures and interconnects. The damage that can take place occurs because of ion bombardment, radiationinduced bonding changes, and charge buildup. If not removed, damage can have effects which vary from gettering to creating traps in insulators and gap states in semiconductors. The contamination that can take place can have two forms: residue layers and permeation. The former are ultrathin layers of reaction products that can coat surfaces whereas the latter is the embedding or implantation, and perhaps subsequent diffusion, of impurities. These impurities can range from metals whose source is the processing chamber to hydrogen which is often found in the etch recipe or may even be found due to the presence of water in the processing chamber. If not removed, residues can interfere with subsequent processing such as oxidation and can cause series resistance in contacts. Impurities, if not removed, can have a range of effects from modifying carrier lifetimes to interfering with subsequent processing. Hydrogen, in particular, can affect materials in a number of ways including modifying doping activation.

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Section: Residues--their Effect Detection and Repercussions--mentioning

confidence: 99%