Epitaxial growth of Al(111)/Si(111) films using partially ionized beam deposition

Abstract

We observed the growth of epitaxial Al(111) films on Si(111) at room temperature by the partially ionized beam deposition technique. The films were deposited in a conventional vacuum condition without in situ cleaning. The beam contained 0.3% of Al self-ions and a bias potential of 1 kV was applied to the substrate during deposition. X-ray diffraction (pole figure) revealed that one of the two possible twin structures, with the Al〈1̄10〉∥Si〈1̄10〉 orientation, was preferentially grown on the Si substrate.

Material matters in superconducting qubits

“…Depending on the growth conditions (temperature, pressure, surface treatment), Al (110) can form on Si (001) [190], [191]. while Al (111) can be formed on Si (111) [192][193][194]. Another consideration is the heterogeneity in oxide thickness on the particular crystal surfaces within the underlying metallic film [195] which, as discussed in Section 4.3, may produce differences in dielectric loss.…”

Formation of High Quality Pure Aluminum Films by Low Kinetic Energy Particle Bombardment

“…Some progress has been made towards improving the metallization scheme both in materials and processes. Aluminum alloys and refractory metals were introduced for the conductor, and chemical vapor deposition (1,2), ionized cluster beam deposition (3), and partially ionized beam deposition (4,5) were presented as new processes. Nevertheless, more reliable metallization schemes are required, and in particular it seems desirable to use pure aluminum with low resistivity, hillock-free, and electromigration resistant characteristics for ULSI interconnections.…”

Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

“…Ions in the evaporant stream increase surface mobility, provide addition energy to the growth front, sputter away light impurities, [19][20][21] and can control nucleation characteristics. 17 The partially ionized beam ͑PIB͒ deposition method has a demonstrated ability to grow high quality epitaxial metal films, [22][23][24] and has recently succeeded in producing more complicated structures such as an epitaxial compound semiconductor and an epitaxial metallic alloy. 15,17 In this work, we study the structural characteristics of heteroepitaxial CoGe 2 alloys deposited on GaAs͑100͒ using the PIB deposition technique.…”