Observation of a New Kinetics to Form Ni[sub 3]Si[sub 2] and Ni[sub 31]Si[sub 12] Silicides at Low Temperature (200°C)

Abstract

The effect of prolonged annealing (10h) at low temperature (200°C) has been studied in 20-nmNi∕Si(100) samples using Rutherford backscattering spectroscopy, X-ray diffraction, and four-point probe techniques. We observed that at 200°C a considerable amount of Ni3Si2 and Ni31Si12 was formed. After 10h annealing at 200°C only a fraction of total amount of Ni has been converted into Ni3Si2 and Ni31Si12 phases and around 60% of nickel remains unreacted. Formation of the Ni3Si2 and Ni31Si12 silicides at 200°C is slow and seems to saturate after approximately 140×1015atoms∕cm2 . It is observed that after 2h annealing the amount of both silicides is almost equal to that after 10h annealing. After 10h annealing at 300°C there is no indication of either Ni3Si2 or Ni31Si12 , and all Ni was consumed and only the stable NiSi phase is detected.

Sputter‐deposited Ni/Ti double‐bilayer thin film and the effect of intermetallics during annealing

“…The presence of a binary silicide Ni 2 Si compound was detected, which grows along the (200) plane of the orientation of the substrate. Here, Ni 2 Si forms earlier than all six stable binary silicides (Ni 3 Si, Ni 31 Si 12 , Ni 2 Si, Ni 3 Si 2 , NiSi, and NiSi 2 ) …”

Microstructural and magnetic properties of thermally mixed Ni/Si bilayers

“…According to the work of Rahman et al [5], at an annealing temperature of 473 K no full phase transformations occur, even though after 10 h of annealing; half the Ni in a 20 nm Ni/Si(1 0 0) bilayer has remained unreacted and a saturated mixture of Ni, Ni 3 Si 2 and Ni 31 Si 12 has been found. On the other hand, after a 10 h annealing at 573 K, all the Ni has been consumed and only the stable NiSi phase detected.…”

“…Metal silicide films, such as TiSi 2 , CoSi 2 and NiSi, are widely used in Si-integrated circuits to reduce the resistivity of gate and local connections [1][2][3][4][5]. Because of low resistivity, comparatively low Si consumption and the absence of bridging problems [5], NiSi appears to be an attractive material for future use in CMOS circuits.…”

“…Metal silicide films, such as TiSi 2 , CoSi 2 and NiSi, are widely used in Si-integrated circuits to reduce the resistivity of gate and local connections [1][2][3][4][5]. Because of low resistivity, comparatively low Si consumption and the absence of bridging problems [5], NiSi appears to be an attractive material for future use in CMOS circuits. Nonetheless, the two common deposition and silicidation methods, namely ion-beam induced mixing and slow or rapid thermal annealing [6][7][8], are rather difficult to apply to achieve suitable interconnects.…”

Co-evaporation of transition metal salt and SiO powder toward copper(or nickel)/silicon-contained composite nanostructures

“…Thermal evaporation [1][2][3][4][5][6][7][8], one of the techniques to produce metal elements/silicon-contained composite nanostructures, has attracted much attention in recent years due to its low cost and ease of manufacture [9][10][11][12][13]. In this technique, low-melting-point metals and SiO powder were selected as catalyst and Si source, respectively, to synthesize the composite nanostructures.…”