Observation of both classical and quantum magnetoresistance in bilayer graphene

Liao, Zhi-Min; Zhou, Yang-Bo; Wu, Han; Han, Binghong; Yu, Dapeng

doi:10.1209/0295-5075/94/57004

Cited by 19 publications

(8 citation statements)

References 15 publications

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“…The aforementioned reduction in mobility (scattering time) to 63% of the original value leads to a decrease in the magnitude of the magnetoresistance by a factor of 0.63 2 = 0.4, which typically scales as MR ∼ (ω c τ ) α where ω c is the cyclotron frequency, τ is the scattering time [21,22] and α is approximately 2, in qualitative agreement with the curves shown in figure 3(d). At the same time, an increase in n h manifests itself in metallic-like temperature dependence of R graphene in figure 3(b).…”

Section: Resultssupporting

confidence: 75%

Stable hole doping of graphene for low electrical resistance and high optical transparency

et al. 2011

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We report on the p doping of graphene with the polymer TFSA ((CF(3)SO(2))(2)NH). Modification of graphene with TFSA decreases the graphene sheet resistance by 70%. Through such modification, we report sheet resistance values as low as 129 Ω, thus attaining values comparable to those of indium-tin oxide (ITO), while displaying superior environmental stability and preserving electrical properties over extended time scales. Electrical transport measurements reveal that, after doping, the carrier density of holes increases, consistent with the acceptor nature of TFSA, and the mobility decreases due to enhanced short-range scattering. The Drude formula predicts that competition between these two effects yields an overall increase in conductivity. We confirm changes in the carrier density and Fermi level of graphene through changes in the Raman G and 2D peak positions. Doped graphene samples display high transmittance in the visible and near-infrared spectrum, preserving graphene's optical properties without any significant reduction in transparency, and are therefore superior to ITO films in the near infrared. The presented results allow integration of doped graphene sheets into optoelectronics, solar cells, and thermoelectric solar cells as well as engineering of the electrical characteristics of various devices by tuning the Fermi level of graphene.

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Section: Resultssupporting

confidence: 75%

Stable hole doping of graphene for low electrical resistance and high optical transparency

et al. 2011

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“…Figure 1(a) shows the MR defined as ½RðBÞ À RðB ¼ 0Þ =RðB ¼ 0Þ Â 100% at T ¼ 300 K. As can be seen, the MR is positive and exhibits a quadratic B dependence near B ¼ 0 T. This parabolic MR can be ascribed to the Lorentz deflection of carriers, which has been observed in Bi 2 Te 3 , 18 Bi 2 Se 3 , 19 and bilayer graphene. 20 With increasing B, the quadratic B dependence is transformed into a linear dependence at high field with no sign of saturation, which indicates that a linear MR is observed in our sample. Since the Lorentz deflection-induced quadratic B dependence saturates at high magnetic field, 13 the observed linear MR cannot be attributed to the Lorentz deflection of carriers.…”

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confidence: 65%

Classical linear magnetoresistance in epitaxial graphene on SiC

Wang

Gao

et al. 2014

Appl. Phys. Lett.

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“…To date, two models have been proposed to explain LMR: the classical model (Parish and Littlewood, PL) [18,19] and the quantum model (Abrikosov) [20,21]. Within the classical model, it is argued that the magnetotransport properties of the material and the LMR are governed by spatial mobility fluctuations rather than the mobility itself [3,19,22,23]. Two cases were studied numerically based on the properties of the mobility, and LMR was observed in both cases.…”

Section: Introductionmentioning

confidence: 99%

Spatial mobility fluctuation induced giant linear magnetoresistance in multilayered graphene foam

Zhang

et al. 2016

Phys. Rev. B

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Giant, positive, and near-temperature-independent linear magnetoresistance (LMR), as large as 340%, was observed in graphene foam with a three-dimensional flexible network. Careful analysis of the magnetoresistance revealed that Shubnikov-de Haas (SdH) oscillations occurred at low temperatures and decayed with increasing temperature. The average classical mobility ranged from 300 (2 K) to 150 (300 K) cm 2 V −1 s −1 , which is much smaller than that required by the observed SdH oscillations. To understand the mechanism behind the observation, we performed the same measurements on the microsized graphene sheets that constitute the graphene foam. Much more pronounced SdH oscillations superimposed on the LMR background were observed in these microscaled samples, which correspond to a quantum mobility as high as 26,500 cm 2 V −1 s −1. Moreover, the spatial mobility fluctuated significantly from 64,200 cm 2 V −1 s −1 to 1370 cm 2 V −1 s −1 , accompanied by a variation of magnetoresistance from near 20,000% to less than 20%. The presence of SdH oscillations actually excludes the possibility that the observed LMR originated from the extreme quantum limit, because this would demand all electrons to be in the first Landau level. Instead, we ascribe the large LMR to the second case of the classical Parish and Littlewood model, in which spatial mobility fluctuation dominates electrical transport. This is an experimental confirmation of the Parish and Littlewood model by measuring the local mobility randomly (by measuring the microsized graphene sheets) and finding the spatial mobility fluctuation.

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Observation of both classical and quantum magnetoresistance in bilayer graphene

Cited by 19 publications

References 15 publications

Stable hole doping of graphene for low electrical resistance and high optical transparency

Stable hole doping of graphene for low electrical resistance and high optical transparency

Classical linear magnetoresistance in epitaxial graphene on SiC

Spatial mobility fluctuation induced giant linear magnetoresistance in multilayered graphene foam

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