Observation of CCNR-type electrical switching in Zn0.3Mn0.7+xSixFe2−2xO4 spinel ferrite series

Abstract

A nonvolatile memory effect exhibited by electric field-induced resistance switching has been the topic of intense research not only due to its applications as resistive random access memory but also from the basic physics point of view. Among several binary and ternary mixed oxide compounds, the ones which possess magnetic ions have shown a great promise. Spinel ferrite system Zn 0.3 Mn 0.7+x Si x Fe 2−2x O 4 with varying x is investigated for its novel electrical switching properties. Both temperature and applied voltage dependence of current-controlled negative resistance-type electrical switching showed better than 200% of resistive switching ratios. Bulk polycrystalline samples showed composition x dependence of resistive switching. The current-voltage characteristics are modeled for low and high applied field regime, and the presence of space-charge-limiting current is confirmed. Thin films of the ferrite system grown by pulsed laser deposition showed almost nonexistence of resistive switching, suggesting that the bulk composition of the compound has a major role to play against the film-electrode interface.

Growth, Structural, and Electrical Properties of Spin Coated LaNiO3 Conducting Oxide

“…Perovskite conducting oxide materials have several advantages over the simple Pt or Ptbased metal bottom electrodes and some of them are, it has improved polarization fatigue, aging characteristics, low leakage currents and crystallographic compatibility [2][3][4]. Oxide based ferroelectric perovskite, recently reported resistive random-access memory (RRAM) [1,5]. Moreover, these conducting oxide layer acts as an excellent seeding layer or buffer layer providing more nucleation sites [6].…”

Magnetotransport properties of Fe substituted Ca3CoMnO6

“…However, type II multiferroics particularly have been receiving technological and fundamental importance because of its coupling between ferroelectricity and ferromagnetism [2][3][4]. The search for multistate memory devices or RRAM devices is everlasting and many such materials are studied till date [5][6][7][8]. Recent discovery of multiferroicity (very likely type-II) in polymeric materials, i.e., magnetic field-poled polyaniline enhanced via Cu +2 has been reported by Liu et al [9].…”