Observation of electron emission from the isotype heterointerface by DLTS

Deep level transient spectroscopy characterization of InAs self-assembled quantum dots

“…We suppose these signals are attributed to the well-known DX centers in the Al 0.35 Ga 0.65 As layer. 11,12 To separate parentage of different peaks we have also prepared a similar structure but without quantum dots. In this case, all the quantum dot peaks completely disappeared.…”

Deep-level transient spectroscopy study of narrow SiGe quantum wells with high Ge content

“…7. Deep-level transient spectroscopy spectrum of a QW ͑Ge concentration xϭ0.5 and QW thickness d QW ϭ3 nm͒ measured for a mesa Schottky diode ͑diameter 0.5 mm, hϭ130 nm, Dϭ240 nm͒ at the reverse bias U R *ϭ2.5 V and the pulse frequency f ϭ2500 s Ϫ1 ͑corresponding to emission rate window e 0 ϭ5580 s Ϫ1 ͒ for different pulse biases U 1 : ͑a͒ 0 V, ͑b͒ 1 V, ͑c͒ 1.5 V, and ͑d͒ 2.0 V. The pulse duration was t p ϭ5 s. 5 and QW thickness d QW ϭ2 nm͒ measured for a planar Schottky diode ͑diameter 0.5 mm, cap layer thickness Dϭ210 nm͒ at the reverse bias U R *ϭ0.6 V, the pulse bias U 1 ϭϪ0.2 V, and the pulse frequency f ϭ100 s Ϫ1 ͑corresponding to emission rate window e 0 ϭ220 s Ϫ1 ͒ for different pulse duration t p : ͑a͒ 0.1 s, ͑b͒ 0.5 s, ͑c͒ 4 s, ͑d͒ 40 s, and ͑e͒ 400 s.…”

“…1,2 But, DLTS investigations of quantum-well ͑QW͒ structures can give rather contradictory results. For example, DLTS results of A III B V semiconductor heterostructures [3][4][5] have not given clear evidence that a direct carrier emission from the QW was really observed. Such a conclusion could only be obtained when the carrier confinement in QW's was also investigated under equilibrium conditions by means of CV ͑Ref.…”

“…Deep-level transient spectroscopy spectrum of a QW ͑Ge concentration xϭ0 5. and QW thickness d QW ϭ3 nm͒ measured for a mesa Schottky diode ͑diameter 0.5 mm, hϭ130 nm, Dϭ240 nm͒ at the reverse bias U R *ϭ2.5 V, the pulse bias U 1 ϭ1.2 V, the pulse duration t p ϭ5 s, and for different pulse frequency f : ͑a͒ 2500 s Ϫ1 , ͑b͒ 250 s Ϫ1 , ͑c͒ 25 s Ϫ1 , as well as for f ϭ2.5 s Ϫ1 with ͑d͒ t p ϭ0.5 s and ͑e͒ t p ϭ5 ms.FIG.…”