Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

Zhu, Qihe; Mou, Shin; Zhou, Xingfei; Zhong, Zhen

doi:10.1016/0749-6036(92)90329-4

Cited by 3 publications

(1 citation statement)

References 8 publications

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“…722 Although other reports have implied a slight deviation from linearity, 723 we will take the small bowing to occur entirely in the CBO. With this assumption, we average the results obtained for GaAs/AlGaAs by various measurement methods 717,[724][725][726][727][728][729][730][731][732][733][734][735][736][737][738][739][740][741][742][743] to obtain the relative VBO between GaAs and AlAs. The result is ⌬E v ϭ0.53 eV ϭ0.34⌬E g , which is the best known value for all of the III-V semiconductors and is well within the uncertainty limits of most experiments.…”

Section: A Gaasõalasmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,674

289

3,822

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, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.

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Section: A Gaasõalasmentioning

confidence: 99%

Band parameters for III–V compound semiconductors and their alloys

Vurgaftman

Meyer

Ram‐Mohan

2001

Journal of Applied Physics

6,674

289

3,822

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Determining band offsets with triple quantum-well structures

Bryant

Bradshaw

Leavitt

et al. 1993

Applied Physics Letters

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Determination of the valence-band discontinuity in Be-doped GaAs/Al0.3Ga0.7As multiple-quantum wells using admittance spectroscopy

Smith

Szmulowicz

Brown

1994

Journal of Applied Physics

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Admittance spectroscopy has been used to determine the value of the valence-band discontinuity in a p-type GaAs/Al0.3Ga0.7As multiple-quantum-well system. The structures were multiple quantum wells grown by molecular-beam epitaxy on semi-insulating GaAs substrates. Three Be-doped (p-type) GaAs wells, 30, 35, and 40 Å wide, were used in these measurements. The barriers were undoped. Based on our measurements and a Fermi-level determination from an 8×8 envelope function approximation calculation of the valence electronic structure of the GaAs/AlGaAs system, the valence-band discontinuity, ΔEv, was found to be 0.165 eV. Using established relations, the band-gap difference in the GaAs/AlGaAs system ΔEg for xAl=0.3 was calculated to be 0.429 eV, which, together with the valence-band offset determined in this work, gives the ratio of the conduction–to–valence-band offsets as 60:40. These values are in excellent agreement with those determined by capacitance-voltage profiling, thus confirming the utility of the admittance spectroscopic technique for determining the band discontinuities in band-gap-engineered materials.

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Determination of the conduction-band offset of a single AlGaAs barrier layer using DLTS

Cited by 3 publications

References 8 publications

Band parameters for III–V compound semiconductors and their alloys

Band parameters for III–V compound semiconductors and their alloys

Determining band offsets with triple quantum-well structures

Determination of the valence-band discontinuity in Be-doped GaAs/Al0.3Ga0.7As multiple-quantum wells using admittance spectroscopy

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