Observation of electron trapping along scratches on SiO2 surface in mirror electron microscope images under ultraviolet light irradiation

Hasegawa, Masaki; Shimakura, Tomokazu

doi:10.1063/1.3383046

Cited by 21 publications

(19 citation statements)

References 17 publications

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“…For instance, the change of surface charge distribution caused by electrons trapped at defects of a SiO 2 surface has been observed by using a mirror electron microscope (MEM) under monochromatized ultraviolet (UV) light irradiation. 138 Scratches on the SiO 2 surface deposited on a silicon wafer were formed by mechanically polishing to create spatially distributed defects on the SiO 2 surface. Exposure of the SiO 2 surface to UV light with energy above 4.25 eV that is the threshold energy for internal photoemission from silicon to SiO 2 , produced significant change in the contrast in the MEM images.…”

Section: Discussionmentioning

confidence: 99%

Dominance of broken bonds and nonbonding electrons at the nanoscale

2010

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Although they exist ubiquitously in human bodies and our surroundings, the impact of nonbonding lone electrons and lone electron pairs has long been underestimated. Recent progress demonstrates that: (i) in addition to the shorter and stronger bonds between under-coordinated atoms that initiate the size trends of the otherwise constant bulk properties when a substance turns into the nanoscale, the presence of lone electrons near to broken bonds generates fascinating phenomena that bulk materials do not demonstrate; (ii) the lone electron pairs and the lone pair-induced dipoles associated with C, N, O, and F tetrahedral coordination bonding form functional groups in biological, organic, and inorganic specimens. By taking examples of surface vacancy, atomic chain end and terrace edge states, catalytic enhancement, conducting-insulating transitions of metal clusters, defect magnetism, Coulomb repulsion at nanoscale contacts, Cu(3)C(2)H(2) and Cu(3)O(2) surface dipole formation, lone pair neutralized interface stress, etc, this article will focus on the development and applications of theory regarding the energetics and dynamics of nonbonding electrons, aiming to raise the awareness of their revolutionary impact to the society. Discussion will also extend to the prospective impacts of nonbonding electrons on mysteries such as catalytic enhancement and catalysts design, the density anomalies of ice and negative thermal expansion, high critical temperature superconductivity induced by B, C, N, O, and F, the molecular structures and functionalities of CF(4) in anti-coagulation of synthetic blood, NO signaling, and enzyme telomeres, etc. Meanwhile, an emphasis is placed on the necessity and effectiveness of understanding the properties of substances from the perspective of bond and nonbond formation, dissociation, relaxation and vibration, and the associated energetics and dynamics of charge repopulation, polarization, densification, and localization. Finding and grasping the factors controlling the nonbonding states and making them of use in functional materials design and identifying their limitations will form, in the near future, a subject area of "nonbonding electronics and energetics", which could be even more challenging, fascinating, promising, and rewarding than dealing with core or valence electrons alone.

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Section: Discussionmentioning

confidence: 99%

Dominance of broken bonds and nonbonding electrons at the nanoscale

2010

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“…In this case, the primary electrons underwent a deceleration in the electrostatic field and reflected onto the equipotential surface in the vicinity of the sample's surface. [12][13][14][15] In the case of EUV mask, because the Ta 2 O 5 absorber layer and native oxide are dielectrics, the equipotential lines can exist within the dielectric layers. Thus, some of the primary electrons can land on the Ta 2 O 5 layer.…”

Section: B Simulation Conditions Of Mirror Electron Imagementioning

confidence: 99%

“…[6][7][8][9] Moreover, several types of electron images such as the secondary 10,11 and the mirror electron images [12][13][14] can be obtained by controlling the primary electron energy using the PEM technique. The mirror electron image is greatly affected by the equipotential distribution in the region of interest.…”

Section: Introductionmentioning

confidence: 99%

“…The mirror electron image is greatly affected by the equipotential distribution in the region of interest. [12][13][14][15] Several researchers have investigated the image characteristics of homogeneous material samples such as a hard disk drive (HDD) disc, 12 SiO 2 , 13 and a nanoimprint-lithography (NIL) template. 14 However, the surface of the EUV mask consists of heterogeneous materials such as metals and dielectrics.…”

Section: Introductionmentioning

confidence: 99%

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Identification of residual-type defect on extreme ultraviolet mask by projection electron microscope using Monte Carlo simulation

Iida¹,

Amano²,

Hirano³

et al. 2012

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Thin absorber defects called residual-type defects are etching residues that tend to become more discernible as the pattern size of the extreme ultraviolet (EUV) mask shrinks. Projection electron microscope (PEM) images of the residual-type defects with various thicknesses were investigated using Monte Carlo simulation. In the case of the secondary electron image, the thickness of the defect was identified by the defect's signal intensity. It was found that the material and its relative thickness affected the signal intensity. In the case of the mirror electron image, three kinds of defects were selectively identified by controlling the primary electron energy. When the energy distribution of the primary electrons was taken into account, these defects were identified by the defects' signal intensities. It was found that the surface potential of the residual-type defects on the EUV mask greatly affected the mirror electron image. These results suggest that the thickness of the residual-type defect is identifiable by the PEM technique, and the defect selectivity is greatly affected by the thickness of the oxide layer when mirror electrons are used.

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“…Like scanning electron microscopy (SEM) and transmission electron microscopy (TEM), MEM employs an electron beam as the probe, but unlike SEM and TEM, MEM applies a negative bias voltage to cause the electron beam to reflect and to form an image by imaging the reflected electron beam. (5) The reflected direction of the electron beam varies according to the electric potential or surface roughness of the sample. Thus, the electric potential distribution and/or microscopic level differences on sample surfaces can be analyzed.…”

Section: Methodsmentioning

confidence: 99%

Assessment of Stacking Faults in Silicon Carbide Crystals

2013

Sensors and Materials

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Key words: silicon carbide (SiC), staking fault, X-ray topography, photoluminescence (PL), mirror electron microscopy (MEM), atomic force microscopy (AFM) X-ray topography, photoluminescence (PL) spectroscopy, mirror electron microscopy (MEM), and atomic force microscopy (AFM) were employed to evaluate stacking faults in silicon carbide (SiC) crystals. The results reveal that transmission X-ray topography can be used to assess internal stacking faults in crystals, while PL spectroscopy and MEM can be used to assess stacking faults near the surface. The stacking faults assessed by these different methods were found to be the same. AFM revealed that sites where stacking faults were exposed on the surface had microscopic level differences of about 0.1 nm, which are thought to be generated by different etch rates during mirror polishing.

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Observation of electron trapping along scratches on SiO2 surface in mirror electron microscope images under ultraviolet light irradiation

Cited by 21 publications

References 17 publications

Dominance of broken bonds and nonbonding electrons at the nanoscale

Dominance of broken bonds and nonbonding electrons at the nanoscale

Identification of residual-type defect on extreme ultraviolet mask by projection electron microscope using Monte Carlo simulation

Assessment of Stacking Faults in Silicon Carbide Crystals

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