1995
DOI: 10.1103/physrevb.51.7954
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Observation of Fabry-Pérot modes in the upper branch of the polariton in ZnSe-GaAs epilayers

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Cited by 11 publications
(8 citation statements)
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“…We also notice that these values are especially remarkable when compared to standard III-V semiconductor heterostructures, in which radiationmatter coupling energy is typically measured in the order of few meV while the coupling strength is in the order of 200 meV in our case. In particular, the present experiments correspond in spirit to early investigations on the optical response of thin films in III-V semiconductors with strong excitonic absorption [37][38][39] , where excitonpolariton effects were first evidenced even in the absence of bottom and top mirrors. Finally, we take advantage of the surface homogeneity of these monocrystalline slabs to illustrate optical propagation for distances of tens of microns without being scattered by defects (see Figure 4a and Figure 12 in the Appendix).…”
Section: Resultssupporting
confidence: 84%
“…We also notice that these values are especially remarkable when compared to standard III-V semiconductor heterostructures, in which radiationmatter coupling energy is typically measured in the order of few meV while the coupling strength is in the order of 200 meV in our case. In particular, the present experiments correspond in spirit to early investigations on the optical response of thin films in III-V semiconductors with strong excitonic absorption [37][38][39] , where excitonpolariton effects were first evidenced even in the absence of bottom and top mirrors. Finally, we take advantage of the surface homogeneity of these monocrystalline slabs to illustrate optical propagation for distances of tens of microns without being scattered by defects (see Figure 4a and Figure 12 in the Appendix).…”
Section: Resultssupporting
confidence: 84%
“…In such confined Fabry-Perot-like structures interference of propagating and counterpropagating polaritons occurs what gives rise to a quantization of the polariton wave vector. This quantization manifests itself by oscillatory structures in luminescence, reflection, and transmission spectra which have been observed in various semiconductors like CdS [6], CdTe [7], GaAs [8 to 111, ZnSe [12,131, and, very recently, in epitaxially grown CuCl layers [14].…”
Section: Introductionmentioning
confidence: 99%
“…[3][4][5][6][7][8][9][10] As compared to the PL spectra, the reflectance spectra of the exciton-polaritons in ZnSe/GaAs heterostructures were less investigated and the spectra are more complicated. [11][12][13][14][15] The existence of the exciton ''dead layer'' and the additional boundary conditions imposed on the polarization field near the sample surface can induce spike-like features. 11,16 -18 The interference of the polaritons scattered from different interfaces and surface can result in standing waves and alert the spectra dramatically.…”
Section: Introductionmentioning
confidence: 99%
“…14 The contributions of the nearly degenerate heavy-hole ͑hh͒ and light-hole ͑lh͒ excitons and their excited states make the spectra even more difficult to interpret without a detailed spectral analysis. 12,13 In spite of these complications, optical reflection remains as one of the most powerful techniques in the investigation of excitonpolaritons in semiconductor heterostructures.…”
Section: Introductionmentioning
confidence: 99%
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