Observation of Fast Microscopic Phase Change Phenomena of Chalcogenide Thin Films

Abstract

Fast microscopic phase change phenomena are observed in real time by measuring reflectivity and transmissivity of chalcogenide thin films. The method for calculating the complex index of refraction from reflectivity and transmissivity in microscopic area is also developed. By comparing the calculated reflectivity and transmissivity with the measured ones, the dynamic phase change phenomena of the film during and after the irradiation can be guessed. Phase change of TeOx film, Te-Ge-Sn-Au film and GeTe film is observed. For the TeOx film, a model for crystallizing process is proposed.

Laser-induced crystallization phenomena in GeTe-based alloys. III. GeTeSe alloys for a CD compatible erasable disk

“…14 (ñ a ϭ4.0Ϫi0.9) and in Ref. 15 (ñ a ϭ4.4Ϫi1.1). For the oven-crystallized state, ñ c ϭ6.66Ϫi3.74, again a reasonable agreement is observed with Ref.…”

Mechanical and electrical properties of GeSb2Te4 film with external voltage applied

“…Kado and Tohda [12,13] have reported reversible recording in amorphous GeSb 2 Te 4 films using an AFM with conducting cantilevers, and detect a drop of the electrical resistance of the films when exposed to electrical pulses of −4 V. Ueno and Gan et al studied the microstructure and morphology of recorded marks in micro area by TEM [14] and X-ray diffraction [15][16][17][18], but it is difficult to relocation the recorded marks due to its small size. Ishiyama [19] evaluated the size of phase-change bits by their frictional contrast and deemed it an effective resort for in situ phase-change observation.…”