2020
DOI: 10.1002/pssa.202000182
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Observation of Large Surface Area Exfoliation in Hydrogen Implanted Ge

Abstract: Large surface area exfoliation of the hydrogen (H)‐implanted Ge is investigated in this work. H+ ions with a fluence of 1 × 1017 cm−2 are implanted in Ge samples at liquid nitrogen and room temperature (RT). The formation of surface blisters and craters is observed in the samples annealed between 300 and 450 °C after implantation. Interestingly, samples implanted at RT show large surface area exfoliation extending over several hundreds of micrometer region after annealing. Secondary ion mass spectroscopy (SIMS… Show more

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