Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

In this paper we report Al/CdSe-ZnS core-shell quantum dot/AlOx/CdSe-ZnS core-shell quantum dot/ITO based non-volatile resistive memory devices with an ON/OFF ratio of ~1000. The facile solution processed device exhibited excellent endurance characteristics for 200,000 switching cycles. Retention tests showed good stability for over 20,000 s and the devices are reproducible. A memory operating mechanism is proposed based on charge trapping-detrapping in core-shell quantum dots with AlOx acting as a barrier leading to Coulomb blockade. I-V characteristics of a three terminal device fabricated with the additional terminal wired-out from the middle AlOx layer supports the proposed charge trapping mechanism.

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Observation of negative differential resistance from a Schottky-barrier structure embedded with Fe quantum dots

Cited by 5 publications

References 18 publications

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