2012
DOI: 10.1063/1.3674307
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Observation of nonlinear absorption and visible photoluminescence emission in chemically synthesized Cu2+ doped ZnS nanoparticles

Abstract: Nonlinear optical properties of chemically synthesized ZnS and Cu2+ doped ZnS nanoparticles of average sizes ∼2.5 nm are reported by using open aperture z-scan technique with the Nd:YAG laser second harmonic radiation at 532 nm. Tunable photoluminescence emissions in the visible region due to the increase in concentration of Cu2+ doping in ZnS are observed at room temperature. By analyzing the experimental z-scan data, it is found that three photon absorptions (3PA) are taking place in all the samples. The ext… Show more

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Cited by 36 publications
(11 citation statements)
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“…These practical facts suggest that CIGS thin film solar cells consisting of a CBD-ZnS buffer layer can achieve an efficiency beyond 20% [5]. ZnS is also an important II-VI compound semiconductor because of its higher transmission, high refractive index, and linear and nonlinear absorption, indicating that it finds wide applications in optoelectronic fields as deep-blue light emitting devices or a base material for phosphors [13][14][15].…”
Section: Introductionmentioning
confidence: 98%
“…These practical facts suggest that CIGS thin film solar cells consisting of a CBD-ZnS buffer layer can achieve an efficiency beyond 20% [5]. ZnS is also an important II-VI compound semiconductor because of its higher transmission, high refractive index, and linear and nonlinear absorption, indicating that it finds wide applications in optoelectronic fields as deep-blue light emitting devices or a base material for phosphors [13][14][15].…”
Section: Introductionmentioning
confidence: 98%
“…The appearance of sharp absorption maximum in Fig. 4 shows the monodisperse nature of nanoparticles [29]. With increasing concentration of NaCMC, the position of the absorption maximum remains almost same.…”
Section: Uv-vis Spectroscopymentioning
confidence: 81%
“…The ZnS, one of the II-VI semiconductor materials, is a wide band gap material with large exciton binding energy (38 meV) [15,16]. Due to its excellent luminescent properties, it could be a promising material for optoelectronic devices such as flat panel display, ultraviolet light emitting diodes, sensors and injection lasers, etc [17][18][19][20]. Experimentally, the magnetic and optical properties of Mn-doped ZnS are extensively studied.…”
Section: Introductionmentioning
confidence: 99%