Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Shin, Seung Wook; Agawane, G.L.; Gang, Myeng Gil; Moholkar, A.V.; Moon, Jong Ha; Kim, Jihun; Lee, Jun Young

doi:10.1016/j.jallcom.2012.02.084

Cited by 56 publications

(43 citation statements)

References 32 publications

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“…For the both spectrum no shoulder on the low or high energy side is observed. Our XPS results enlisted for the CBD-ZnS thin films are very similar to the results reported elsewhere [32,37]. Table 1 shows the compositional analysis of CBD-ZnS thin films deposited using 0 to 0.2 M Na 3 -citrate, studied via the EDS technique.…”

Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 84%

“…The average transmittance of the ZnS thin films deposited at 0 M Na 3 -citrate and with Na 3 -citrate is approximately 75 and 85%, respectively. Similar kind of nature of increase in transmittance for the films deposited with Na 3 -citrate is reported elsewhere [37]. In addition, it is well known that transmittance of the thin film is strongly related to the thickness and surface condition (RMS) observed in the film [24].…”

Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 81%

“…Therefore, d-spacing value measurements are carried out to clarify the phase formation of ZnS thin films using HR-TEM study (results are not shown here). Our previous HR-TEM study confirms that films deposited at 0.1 and 0.2 M Na 3 -citrate have a d-spacing of $0.3130 nm, which is similar to the (0 0 1 6) plane of a hexagonal ZnS phase [37]. These structural studies suggest that the ZnS thin films deposited at 0.1 and 0.2 M of Na 3 -citrate are grown as a pure hexagonal structure.…”

Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 67%

“…These structural studies suggest that the ZnS thin films deposited at 0.1 and 0.2 M of Na 3 -citrate are grown as a pure hexagonal structure. It is well known that the thickness of the film plays an important role to determine the crystalline structure of the film [29,32,37]. From our FE-SEM results (Fig.…”

Section: Characterization Of Chemically Grown Zns Thin Filmsmentioning

confidence: 72%

“…This shows that at the higher concentration of citrate ions the film gives rise to only Zn-S bonding with its higher degree of Zn-S saturation. In addition, the shift of Zn-S bonding from the 162.5 to 161.9 eV with an increasing Na 3 -citrate's concentration is takes place, which shows that the S 2p 1/2 core level may be turned to S 2p 3/2 core level [37]. For the both spectrum no shoulder on the low or high energy side is observed.…”

Section: Characterization Of Chemically Grown Zns Thin Filmsmentioning

confidence: 86%

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Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Agawane

Shin²,

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et al. 2012

Journal of Alloys and Compounds

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Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 84%

Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 81%

Section: Characterization Of Chemically Grown Zns Thin Filmssupporting

confidence: 67%

Section: Characterization Of Chemically Grown Zns Thin Filmsmentioning

confidence: 72%

Section: Characterization Of Chemically Grown Zns Thin Filmsmentioning

confidence: 86%

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Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Agawane

Shin²,

Moholkar

et al. 2012

Journal of Alloys and Compounds

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Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

et al. 2023

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Information‐processing devices are the core components of modern electronics. Integrating them into textiles is the indispensable demand for electronic textiles to form close‐loop functional systems. Memristors with crossbar configuration are regarded as promising building blocks to design woven information‐processing devices that seamlessly unify with textiles. However, the memristors always suffer from severe temporal and spatial variations due to the random growth of conductive filaments during filamentary switching processes. Here, inspired by the ion nanochannels across synaptic membranes, a highly reliable textile‐type memristor made of Pt/CuZnS memristive fiber with aligned nanochannels, showing small set voltage variation (<5.6%) under ultralow set voltage (≈0.089 V), high on/off ratio (≈106), and low power consumption (0.1 nW), is reported. Experimental evidence indicate that nanochannels with abundant active S defects can anchor silver ions and confine their migrations to form orderly and efficient conductive filaments. Such memristive performances enable the resultant textile‐type memristor array to have high device‐to‐device uniformity and process complex physiological data like brainwave signals with high recognition accuracy (95%). The textile‐type memristor arrays are mechanically durable to withstand hundreds of bending and sliding deformations, and seamlessly unified with sensing, power‐supplying, and displaying textiles/fibers to form all‐textile integrated electronic systems for new generation human‐machine interactions.

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A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga₂O₃ Heterojunction

Yan

et al. 2022

Adv Materials Inter

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Ultraviolet (UV) photodetectors (PDs) are widely used in various fields, such as flame sensing, pollution monitoring, space-tospace communication, ozone-layer holes monitoring, UV-emitter calibration and missile plume detection. [1][2][3][4][5] The radiation in UVC band (200-280 nm) is completely absorbed by the earth atmosphere and does not reach the ground. Therefore, UVC is known as the solar-blind ultraviolet range. So, the photodetector operating in UVC band can effectively avoid the interference from solar radiation, resulting in high-precision detection and strong anti-interference ability, even when exposed to sunlight. [6] Meanwhile, with the phenomenon of thinning ozone layer and even ozone layer hole. Monitoring personal UV exposure has excited the interest of researchers. Therefore, the wearable feature of UV-Radiation Monitor, which provides great convenience for people in the process of using, is eagerly desired and expected to be realized for the current research. Mai et al. synthesized Lead-Free Perovskite film such as Cs 2 AgBiCl 6 , Cs 3 Bi 2 Cl x Br 9−x through vapor-phase anion-exchange strategy. [7,8] These photodetectors based on Lead-Free Perovskite have been used as UV imaging sensor for practical application with excellent performances. In addition, the property of self-powered guarantee devices can work without external energy supply. However, many UV PD must work under the relative high bias. The harsh requirement for this kind of devices hinders the process in the use of wearable UV PD undoubtedly. Therefore, the self-powered property of devices provides a guideline toward integrated wearable UV PD.β-Ga 2 O 3 as the ultra-wide bandgap semiconductor has attracted wide spread attention for fabricating the solar-band UV PD. It has huge potential in prominent candidates not only its large band gap of 4.8 eV but also high thermal and chemical stability. [9,10] Therefore, photodetector based on β-Ga 2 O 3 can work in harsh environments. In addition, β-Ga 2 O 3 shows an n-type semiconductor feature which derives from intrinsic oxygen deficiency generally. [11,12] The self-powered system can be driven by a built-in electric field, which is mainly provided by a p-n homojunction, a p-n Fabricating a heterojunction photodetector is efficient to take advantage of the built-in electric field formed by heterojunction and thus improve the performance of photodetector. Herein, a CuZnS/Ga 2 O 3 type-II heterojunction photodetector is designed and constructed by chemical bath deposition for the first time. The photodetector exhibits super high rectifying characteristics (5.7 × 10 4 at ± 1 V), high responsivity (48.01 mA W −1 at 0 V), and detectivity (1.83 × 10 12 Jones at 0 V), which are higher than most of the reported inorganic devices as far as the authors know. Benefiting from built-in electric field constructed by the CuZnS/Ga 2 O 3 type-II heterojunction, the photo-induced electron and hole pairs are quickly separated by the built-in electric field between the Ga 2 O 3 and the CuZnS interface. Th...

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Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Cited by 56 publications

References 32 publications

Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga₂O₃ Heterojunction

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Preparation and characteristics of chemical bath deposited ZnS thin films: Effects of different complexing agents

Cited by 56 publications

References 32 publications

Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Non-toxic complexing agent Tri-sodium citrate’s effect on chemical bath deposited ZnS thin films and its growth mechanism

Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga2O3 Heterojunction

Contact Info

Product

Resources

About

A High Responsivity and Photosensitivity Self‐Powered UV Photodetector Constructed by the CuZnS/Ga₂O₃ Heterojunction