Observation of room-temperature laser emission from type III InAs/GaSb multiple quantum well structures

Abstract

Multiple quantum well InAs/GaSb laser heterostructures with type III (type II broken gap) band alignment in the active region have been grown by molecular beam epitaxy. Intense electroluminescence was observed at room temperature (RT) with peak emission wavelengths in the range 1.95–3.4 μm. RT lasing has been achieved at 1.98 and 2.32 μm for the structures with 6 and 12 Å thick InAs quantum wells, respectively.

Electrical and photoelectrical properties of isotype N+-GaSb/n0-GaInAsSb type II heterojunctions

“…Type II heterostructures in the InAs-GaSb system have recently attracted great attention as promising materials for optoelectronic devices (lasers, light-emitting diodes and photodiodes) for the spectral range of 2-5 lm [1][2][3], which is useful for gas pollutant analysis. The unusual band energy diagram of type II heterojunction results in electron and holes being localized in self-consistent quantum wells on either side of the interface [4].…”

Advanced RHEED Instrumentation for the Analysis of the Initial Stages of MBE Quantum Dot Growth for Semiconductor Lasers

“…With increased wavelength in this materials system, however, comes a loss in efficiency and degradation in the characteristic temperature, To. As a remedy, Type-II heterojunctions can provide longer wavelength lasers, but these structures suffer from small spatial overlap of the electron and hole wave-function [3]. The wave-function spatial overlap and the heavy-hole splitting can be increased by growing more complex Type-II wells such as the 'W' laser.…”

GaAsSb layer thickness dependence of arsenic incorporation on InAs/GaAsSb superlattice on InAs substrate grown by metalorganic vapor phase epitaxy for mid-infrared device

“…The first InAs=GaSb T2SL photodetector was demonstrated by Johnson et al in 1996, 17) and since then, lasers have been studied. 18,19) High-performance devices based on InAs=GaAs T2SLs were grown by molecular beam epitaxy (MBE), [20][21][22][23] and there have been reports on trials of InAs=GaSb grown by the metal organic vapor phase epitaxy (MOVPE) method. [24][25][26][27] In recent years, InAs=GaSb T2SL has been grown by production-scale MOVPE with qualities and device performances close to those grown by MBE.…”